Abstract
In this work, an InAs-based gate-all-around (GAA) arch-shaped tunneling field-effect transistor (TFET) was designed and analyzed using technology computer-aided design (TCAD) simulations. To progress the DC/RF characteristics of GAA arch-shaped TFET, InAs, a highly attractive III-V compound material, is adopted as a channel material. Owing to the GAA arch-shaped structure of TFET, the tunneling region under the gate area is extended, and the on-state current (Ion) and subthreshold-swing (S) are improved. However, it has some performance limitations that are related to the height of the source region (Hsource) and the epitaxially grown thickness of the channel (tepi). Thus, we performed a design optimization of the InAs-based GAA arch-shaped TFET with the variables Hsource and tepi. After the optimization process, RF characteristics such as gate capacitance, transconductance (gm), cutoff frequency (fT), and maximum oscillation frequency (fmax) were extracted and analyzed by small-signal RF modeling. Finally, the designed InAs-based GAA arch-shaped TFET demonstrated an Ion of 10.6 mA/μm, S of 6.5 mV/dec, fT of 2.3 THz, and fmax of 20 THz.
Original language | English |
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Pages (from-to) | 10199-10203 |
Number of pages | 5 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 16 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2016 |
Bibliographical note
Publisher Copyright:Copyright © 2016 American Scientific Publishers All rights reserved.
Keywords
- Arch shape
- GAA
- III-V compound semiconductor
- InAs
- TCAD
- TFET