Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)

  • Seongjae Cho
  • , Jung Hoon Lee
  • , Shinichi O'Uchi
  • , Kazuhiko Endo
  • , Meishoku Masahara
  • , Byung Gook Park

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

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