Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)
- Seongjae Cho
- , Jung Hoon Lee
- , Shinichi O'Uchi
- , Kazuhiko Endo
- , Meishoku Masahara
- , Byung Gook Park
Research output: Contribution to journal › Article › peer-review
5
Scopus
citations