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Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)
Seongjae Cho, Jung Hoon Lee, Shinichi O'Uchi, Kazuhiko Endo, Meishoku Masahara, Byung Gook Park
Research output: Contribution to journal › Article › peer-review