Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)

Seongjae Cho; Jung Hoon Lee; Shinichi O'uchi; Kazuhiko Endo; Meishoku Masahara; Byung Gook Park

doi:10.1109/ISDRS.2009.5378143

Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)

Seongjae Cho, Jung Hoon Lee, Shinichi O'uchi, Kazuhiko Endo, Meishoku Masahara, Byung Gook Park

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378143
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 9 Dec 2009 → 11 Dec 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	9/12/09 → 11/12/09

Access to Document

10.1109/ISDRS.2009.5378143

Cite this

Cho, S., Lee, J. H., O'uchi, S., Endo, K., Masahara, M., & Park, B. G. (2009). Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL). In 2009 International Semiconductor Device Research Symposium, ISDRS '09 Article 5378143 (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378143

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title = "Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)",

author = "Seongjae Cho and Lee, {Jung Hoon} and Shinichi O'uchi and Kazuhiko Endo and Meishoku Masahara and Park, {Byung Gook}",

year = "2009",

doi = "10.1109/ISDRS.2009.5378143",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

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Cho, S, Lee, JH, O'uchi, S, Endo, K, Masahara, M & Park, BG 2009, Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL). in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378143, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 9/12/09. https://doi.org/10.1109/ISDRS.2009.5378143

Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL). / Cho, Seongjae; Lee, Jung Hoon; O'uchi, Shinichi et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378143 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Cho, Seongjae

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AU - O'uchi, Shinichi

AU - Endo, Kazuhiko

AU - Masahara, Meishoku

AU - Park, Byung Gook

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BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

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Cho S, Lee JH, O'uchi S, Endo K, Masahara M, Park BG. Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL). In 2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378143. (2009 International Semiconductor Device Research Symposium, ISDRS '09). doi: 10.1109/ISDRS.2009.5378143