Design of a recessed-gate GaN-based MOSFET using a dual gate dielectric for high-power applications

Young Jun Yoon, Hee Sung Kang, Jae Hwa Seo, Young Jo Kim, Jin Hyuk Bae, Jung Hee Lee, In Man Kang, Seongjae Cho, Eou Sik Cho

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We have investigated gallium-nitride (GaN)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) having a recessed-gate structure for high-power applications. Recessed-gate GaN-based MOSFETs have been designed with a dual high-k dielectric structure to overcome low current drivability. Compared to recessed-gate GaN-based MOSFETs having a single gate dielectric with the same oxide thickness, recessed-gate GaN-based MOSFETs having a dual high-k dielectric composed of Al2O3 and HfO2 have achieved a high drain current (ID) and transconductance (gm) due to the high dielectric constant of HfO2. Also, because the dual high-k dielectric forms a high electron density in the channel layer with outstanding gate control capability, low channel resistances (Rch) have obtained. In addition, we have studied the effect of the length between the gate and the drain (Lgd) on the on-resistance (Ron) to minimize the Ron that is associated with power consumption and switching performance. Also, the electric field distribution of a device having a dual high-k dielectric has been examined with a field plate structure for high drive voltage. The proposed device was confirmed to be a remarkable candidate for switching devices in high-power applications.

Original languageEnglish
Pages (from-to)1579-1584
Number of pages6
JournalJournal of the Korean Physical Society
Issue number10
StatePublished - 6 Dec 2014

Bibliographical note

Funding Information:
This research was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) under Grants 2012-000567 and 2013-011522, and in part by Samsung Electronics Corporation. This research was also supported by NRF (National Research Foundation of Korea) Grant funded by the Korean Government (NRF-2013-Global Ph.D. Fellowship Program).

Publisher Copyright:
© 2014, The Korean Physical Society.


  • Gallium nitride
  • High-k dielectric
  • Metal-oxide-semiconductor field-effect transistor
  • Normally-off
  • Recessed-gate


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