Design and realization of low-cost 10 W power amplifier module at 7.9–8.4 GHz

Chi Hyung Ahn; Younghoon Kim; Sungwon Oh; Yeonjun Noh; Dong Ho Lee; Sanghun Lee; Kunhee Cho; Jusung Kim

doi:10.1587/elex.15.20180775

Design and realization of low-cost 10 W power amplifier module at 7.9–8.4 GHz

Chi Hyung Ahn, Younghoon Kim, Sungwon Oh, Yeonjun Noh, Dong Ho Lee, Sanghun Lee, Kunhee Cho, Jusung Kim

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This letter describes the design and realization of the low-cost power amplifier module with operation frequency at 7.9–8.4 GHz. Realized power amplifier module employing fully internally matched GaN HEMT power amplifier exhibits 10 W output power and associated gain of 50.1 dB at X-band frequency for satellite communications. The module exhibits the 20% of power added efficiency (PAE), whereas the main power amplifier with internally matched HEMT device achieves 29.3% of PAE. 3^rd order intermodulation level is less than −35 dBc with 7 dB output power back-off condition. Proposed housing method of the power amplifier module reduces the thermal distribution by more than 30°C.

Original language	English
Article number	20180775
Journal	IEICE Electronics Express
Volume	15
Issue number	19
DOIs	https://doi.org/10.1587/elex.15.20180775
State	Published - 10 Oct 2018

Bibliographical note

Publisher Copyright:
© IEICE 2018.

Keywords

Gallium nitride
High mobility electron transistor (HEMT)
Microwave transistor
X-band

Access to Document

10.1587/elex.15.20180775

Cite this

@article{070fda1a20d3460aac0abfac3f44aa9a,

title = "Design and realization of low-cost 10 W power amplifier module at 7.9–8.4 GHz",

abstract = "This letter describes the design and realization of the low-cost power amplifier module with operation frequency at 7.9–8.4 GHz. Realized power amplifier module employing fully internally matched GaN HEMT power amplifier exhibits 10 W output power and associated gain of 50.1 dB at X-band frequency for satellite communications. The module exhibits the 20\% of power added efficiency (PAE), whereas the main power amplifier with internally matched HEMT device achieves 29.3\% of PAE. 3rd order intermodulation level is less than −35 dBc with 7 dB output power back-off condition. Proposed housing method of the power amplifier module reduces the thermal distribution by more than 30°C.",

keywords = "Gallium nitride, High mobility electron transistor (HEMT), Microwave transistor, X-band",

author = "Ahn, \{Chi Hyung\} and Younghoon Kim and Sungwon Oh and Yeonjun Noh and Lee, \{Dong Ho\} and Sanghun Lee and Kunhee Cho and Jusung Kim",

note = "Publisher Copyright: {\textcopyright} IEICE 2018.",

year = "2018",

month = oct,

day = "10",

doi = "10.1587/elex.15.20180775",

language = "English",

volume = "15",

journal = "IEICE Electronics Express",

issn = "1349-2543",

publisher = "Institute of Electronics Information Communication Engineers",

number = "19",

}

TY - JOUR

T1 - Design and realization of low-cost 10 W power amplifier module at 7.9–8.4 GHz

AU - Ahn, Chi Hyung

AU - Kim, Younghoon

AU - Oh, Sungwon

AU - Noh, Yeonjun

AU - Lee, Dong Ho

AU - Lee, Sanghun

AU - Cho, Kunhee

AU - Kim, Jusung

PY - 2018/10/10

Y1 - 2018/10/10

N2 - This letter describes the design and realization of the low-cost power amplifier module with operation frequency at 7.9–8.4 GHz. Realized power amplifier module employing fully internally matched GaN HEMT power amplifier exhibits 10 W output power and associated gain of 50.1 dB at X-band frequency for satellite communications. The module exhibits the 20% of power added efficiency (PAE), whereas the main power amplifier with internally matched HEMT device achieves 29.3% of PAE. 3rd order intermodulation level is less than −35 dBc with 7 dB output power back-off condition. Proposed housing method of the power amplifier module reduces the thermal distribution by more than 30°C.

AB - This letter describes the design and realization of the low-cost power amplifier module with operation frequency at 7.9–8.4 GHz. Realized power amplifier module employing fully internally matched GaN HEMT power amplifier exhibits 10 W output power and associated gain of 50.1 dB at X-band frequency for satellite communications. The module exhibits the 20% of power added efficiency (PAE), whereas the main power amplifier with internally matched HEMT device achieves 29.3% of PAE. 3rd order intermodulation level is less than −35 dBc with 7 dB output power back-off condition. Proposed housing method of the power amplifier module reduces the thermal distribution by more than 30°C.

KW - Gallium nitride

KW - High mobility electron transistor (HEMT)

KW - Microwave transistor

KW - X-band

UR - https://www.scopus.com/pages/publications/85060917615

U2 - 10.1587/elex.15.20180775

DO - 10.1587/elex.15.20180775

M3 - Article

AN - SCOPUS:85060917615

SN - 1349-2543

VL - 15

JO - IEICE Electronics Express

JF - IEICE Electronics Express

IS - 19

M1 - 20180775

ER -

Design and realization of low-cost 10 W power amplifier module at 7.9–8.4 GHz

Abstract

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this