Design and optimization of two-bit double-gate nonvolatile memory cell for highly reliable operation

Engineering

• Nonvolatile Memory 100%
• Reliable Operation 100%
• Floating Gate 66%
• Flash Memory 66%
• Dielectrics 33%
• Two Dimensional 33%
• Optimum Condition 33%
• Nodes 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%
• Cell Operation 33%
• Memory Type 33%
• Good Condition 33%
• Oxide-Nitride-Oxide 33%

Material Science

• Oxide Compound 100%
• Silicon 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Nitride Compound 50%
• Device Type 50%
• Dielectric Material 50%