Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT)

Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Young Woo Jo, Dong Hyeok Son, Jung Hee Lee, Eou Sik Cho, Seongjae Cho, In Man Kang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Vertical-channel gallium nitride (GaN) junctionless nanowire transistor (JNT) has been designed and characterized by technology computer-aided design (TCAD) simulations. Various characteristics such as wide bandgap, strong polariztion field, and high electron velocity make GaN one of the attractive materials in advanced electronics in recent times. Nanowire-structured GaN can be applicable to various transistors for enhanced electrical performances by its geometrical feature. In this paper, we analyze the direct-current (DC) characteristics depending on various channel doping concentrations (Nch ) and nanowire radii (RNW). Furthermore, the radio-frequency (RF) characteristics under optimized conditions are extracted by small-signal equivalent circuit modeling. For the optimally designed vertical GaN JNT demonstrated on-state current (Ion ) of 345 μA/μm and off-state current (Ioff ) of 3.7 × 10-18 A/μm with a threshold voltage (Vt ) of 0.22 V, and subthreshold swing (S) of 68 mV/dec. Besides, fT and fmaxunder different operating conditions (gate voltage, VGS have been obtained.

Original languageEnglish
Pages (from-to)8130-8135
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Issue number11
StatePublished - 1 Nov 2014


  • GaN
  • Junctionless
  • Nanowire
  • Radio-Frequency
  • Small-Signal modeling
  • Tcad simulation


Dive into the research topics of 'Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT)'. Together they form a unique fingerprint.

Cite this