Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT)

Jae Hwa Seo; Young Jun Yoon; Hwan Gi Lee; Gwan Min Yoo; Young Woo Jo; Dong Hyeok Son; Jung Hee Lee; Eou Sik Cho; Seongjae Cho; In Man Kang

Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT)

Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Young Woo Jo, Dong Hyeok Son, Jung Hee Lee, Eou Sik Cho, Seongjae Cho, In Man Kang

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Vertical-channel gallium nitride (GaN) junctionless nanowire transistor (JNT) has been designed and characterized by technology computer-aided design (TCAD) simulations. Various characteristics such as wide bandgap, strong polariztion field, and high electron velocity make GaN one of the attractive materials in advanced electronics in recent times. Nanowire-structured GaN can be applicable to various transistors for enhanced electrical performances by its geometrical feature. In this paper, we analyze the direct-current (DC) characteristics depending on various channel doping concentrations (N_ch ) and nanowire radii (R_NW). Furthermore, the radio-frequency (RF) characteristics under optimized conditions are extracted by small-signal equivalent circuit modeling. For the optimally designed vertical GaN JNT demonstrated on-state current (I_on ) of 345 μA/μm and off-state current (I_off ) of 3.7 × 10_-18 A/μm with a threshold voltage (V_t ) of 0.22 V, and subthreshold swing (S) of 68 mV/dec. Besides, f_T and f_maxunder different operating conditions (gate voltage, V_GS have been obtained.

Original language	English
Pages (from-to)	8130-8135
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	14
Issue number	11
State	Published - 1 Nov 2014

Bibliographical note

Publisher Copyright:
© 2014 American Scientific Publishers All rights reserved.

Keywords

GaN
Junctionless
Nanowire
Radio-Frequency
Small-Signal modeling
Tcad simulation

Cite this

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title = "Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT)",

abstract = "Vertical-channel gallium nitride (GaN) junctionless nanowire transistor (JNT) has been designed and characterized by technology computer-aided design (TCAD) simulations. Various characteristics such as wide bandgap, strong polariztion field, and high electron velocity make GaN one of the attractive materials in advanced electronics in recent times. Nanowire-structured GaN can be applicable to various transistors for enhanced electrical performances by its geometrical feature. In this paper, we analyze the direct-current (DC) characteristics depending on various channel doping concentrations (Nch ) and nanowire radii (RNW). Furthermore, the radio-frequency (RF) characteristics under optimized conditions are extracted by small-signal equivalent circuit modeling. For the optimally designed vertical GaN JNT demonstrated on-state current (Ion ) of 345 μA/μm and off-state current (Ioff ) of 3.7 × 10-18 A/μm with a threshold voltage (Vt ) of 0.22 V, and subthreshold swing (S) of 68 mV/dec. Besides, fT and fmaxunder different operating conditions (gate voltage, VGS have been obtained.",

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author = "Seo, {Jae Hwa} and Yoon, {Young Jun} and Lee, {Hwan Gi} and Yoo, {Gwan Min} and Jo, {Young Woo} and Son, {Dong Hyeok} and Lee, {Jung Hee} and Cho, {Eou Sik} and Seongjae Cho and Kang, {In Man}",

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AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Lee, Hwan Gi

AU - Yoo, Gwan Min

AU - Jo, Young Woo

AU - Son, Dong Hyeok

AU - Lee, Jung Hee

AU - Cho, Eou Sik

AU - Cho, Seongjae

AU - Kang, In Man

PY - 2014/11/1

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N2 - Vertical-channel gallium nitride (GaN) junctionless nanowire transistor (JNT) has been designed and characterized by technology computer-aided design (TCAD) simulations. Various characteristics such as wide bandgap, strong polariztion field, and high electron velocity make GaN one of the attractive materials in advanced electronics in recent times. Nanowire-structured GaN can be applicable to various transistors for enhanced electrical performances by its geometrical feature. In this paper, we analyze the direct-current (DC) characteristics depending on various channel doping concentrations (Nch ) and nanowire radii (RNW). Furthermore, the radio-frequency (RF) characteristics under optimized conditions are extracted by small-signal equivalent circuit modeling. For the optimally designed vertical GaN JNT demonstrated on-state current (Ion ) of 345 μA/μm and off-state current (Ioff ) of 3.7 × 10-18 A/μm with a threshold voltage (Vt ) of 0.22 V, and subthreshold swing (S) of 68 mV/dec. Besides, fT and fmaxunder different operating conditions (gate voltage, VGS have been obtained.

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ER -

Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT)

Abstract

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Keywords

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