Design and analysis of sub-10 nm junctionless fin-shaped field-effect transistors

Sung Yoon Kim; Jae Hwa Seo; Young Jun Yoon; Gwan Min Yoo; Young Jae Kim; Hye Rim Eun; Hye Su Kang; Jungjoon Kim; Seongjae Cho; Jung Hee Lee; In Man Kang

doi:10.5573/JSTS.2014.14.5.508

Design and analysis of sub-10 nm junctionless fin-shaped field-effect transistors

Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, Gwan Min Yoo, Young Jae Kim, Hye Rim Eun, Hye Su Kang, Jungjoon Kim, Seongjae Cho, Jung Hee Lee, In Man Kang

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulktype fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width (W_fin) and height (H_fin) of the fin as well as the channel doping concentration (N_ch). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

Original language	English
Pages (from-to)	508-517
Number of pages	10
Journal	Journal of Semiconductor Technology and Science
Volume	14
Issue number	5
DOIs	https://doi.org/10.5573/JSTS.2014.14.5.508
State	Published - 1 Oct 2014

Bibliographical note

Publisher Copyright:
© 2014, Institute of Electronics Engineers of Korea. All rights reserved.

Keywords

3-D device simulation
Fin-shaped field-effect transistor (FinFET)
Junctionless
Short-channel effect (SCE)

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10.5573/JSTS.2014.14.5.508

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title = "Design and analysis of sub-10 nm junctionless fin-shaped field-effect transistors",

abstract = "We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulktype fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width (Wfin) and height (Hfin) of the fin as well as the channel doping concentration (Nch). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.",

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AU - Kim, Sung Yoon

AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Yoo, Gwan Min

AU - Kim, Young Jae

AU - Eun, Hye Rim

AU - Kang, Hye Su

AU - Kim, Jungjoon

AU - Cho, Seongjae

AU - Lee, Jung Hee

AU - Kang, In Man

PY - 2014/10/1

Y1 - 2014/10/1

N2 - We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulktype fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width (Wfin) and height (Hfin) of the fin as well as the channel doping concentration (Nch). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

AB - We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulktype fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width (Wfin) and height (Hfin) of the fin as well as the channel doping concentration (Nch). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

KW - 3-D device simulation

KW - Fin-shaped field-effect transistor (FinFET)

KW - Junctionless

KW - Short-channel effect (SCE)

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SN - 1598-1657

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EP - 517

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 5

ER -

Design and analysis of sub-10 nm junctionless fin-shaped field-effect transistors

Abstract

Bibliographical note

Keywords

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