Design and analysis of sub-10 nm junctionless fin-shaped field-effect transistors

Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, Gwan Min Yoo, Young Jae Kim, Hye Rim Eun, Hye Su Kang, Jungjoon Kim, Seongjae Cho, Jung Hee Lee, In Man Kang

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulktype fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width (Wfin) and height (Hfin) of the fin as well as the channel doping concentration (Nch). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

Original languageEnglish
Pages (from-to)508-517
Number of pages10
JournalJournal of Semiconductor Technology and Science
Issue number5
StatePublished - 1 Oct 2014

Bibliographical note

Publisher Copyright:
© 2014, Institute of Electronics Engineers of Korea. All rights reserved.


  • 3-D device simulation
  • Fin-shaped field-effect transistor (FinFET)
  • Junctionless
  • Short-channel effect (SCE)


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