Design and analysis of logic inverter using antimonide-based compound semiconductor junctionless transistor

In this paper, the optimization of gallium antimonide (GaSb) junctionless field-effect transistor (JLFETs) and logic inverter characteristics are analyzed. The hole mobility of GaSb is much higher than that of Si, which warrants high-performance p-channel transistor and low-power operation capability, and also, the mismatch between electron and hole mobilities is much lessened. Consequently, the dimension of p-channel MOSFET based on GaSb can be significantly reduced compared with the Si case. For these reasons and the potential application of GaSb to wide variety of III–V compound semiconductors towards electronics and photonics integration, and components under the extreme conditions, GaSb JLFET is studied in depth in this work. The proposed GaSb JLFET has the Al ₂ O ₃ buffer between the channel and the Si substrate, which releases the lattice mismatch and suppresses leakage current effectively. The proposed n-channel JLFET has an I _on of 472 µA/µm and, SS of 76.2 mV/dec. The p-channel JLFET has an I _on of 541 µA/µm and SS of 73.4 mV/dec. The inverter using GaSb JLFETs shows excellent performances including NM _L = 0.28 V, NM _H = 0.29 V, τ _PHL of 1.8 ps, and τ _PLH of 6.8 ps at an operating voltage as low as V _DD = 0.7 V.