Design and analysis for 3D vertical resistive random access memory structures with silicon bottom electrodes

Tae Hyeon Kim, Sungjun Kim, Min Hwi Kim, Seongjae Cho, Byung Gook Park

Research output: Contribution to journalArticlepeer-review


In this work, we propose two 3D vertical RRAM structures and their detailed fabrication methods. One is a double-horizontal-electrode (DHE) structure where a top electrode covers both sides of a silicon bottom electrode, and the other is a gate-all-around (GAA) structure where silicon nanowires are enclosed by resistive switching layers and resistive switching layers are enclosed by top electrodes. In these two 3D vertical structures, the chemical vapor deposition (CVD) process is essential for deposition of a resistive switching layer and a top electrode material, and heavily bottom electrode. Several advantages of resistive random access memory (RRAM) with metal-insulator-semiconductor (MIS) structure are also investigated. Furthermore, we fabricated a W/Si3N4/n+-doped-polysilicon RRAM device, composed of suitable materials for the proposed 3D RRAM structures and investigated its resistive switching characteristics.

Original languageEnglish
Pages (from-to)7160-7163
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number10
StatePublished - Oct 2017

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT and Future Planning (2015R1A2A1A01007307).

Publisher Copyright:
Copyright © 2017 American Scientific Publishers All rights reserved


  • 3D Vertical Structure
  • Resistive Switching.
  • SiN Based RRAM


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