Dependence of program and erase speed on bias conditions for fully depleted channel of vertical NAND flash memory devices

  • Seongjae Cho
  • , Yoon Kim
  • , Jang Gn Yun
  • , Lung Hoon Lee
  • , Won Bo Shim
  • , Byung Gook Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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