Demonstration of PdSe2 CMOS Using Same Metal Contact in PdSe2 n-/p-MOSFETs through Thickness-Dependent Phase Transition

Jae Eun Seo, Eunpyo Park, Tanmoy Das, Joon Young Kwak, Jiwon Chang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this study, PdSe2 n- and p-metal-oxide semiconductor field-effect transistors (MOSFETs) are realized using the same conventional metal contact without any doping processes through utilizing the thickness-dependent phase transition in PdSe2. PdSe2 is semiconducting with a sizable band gap in a few layers while semimetallic in bulk. With the thin semiconducting PdSe2 for the channel and the conventional metal source/drain, an n-type behavior is achieved, whereas a p-type behavior with the thin PdSe2 channel and the thick semimetallic PdSe2 source/drain. To understand the carrier injection at the interface between the thin PdSe2 channel and the thick PdSe2 source/drain, a rigorous analysis of the band alignment and the temperature-dependent transfer characteristics is presented to extract the Schottky barrier height at the interface. Additionally, interconnecting PdSe2 n- and p-MOSFETs successfully demonstrate complementary metal-oxide semiconductor (CMOS) inverter with clear voltage transfer characteristics. The proposed approach to control the polarity of PdSe2 MOSFETs using the unique thickness-dependent phase transition in PdSe2 is promising for realizing the CMOS logic circuit with the same channel material and single contact metal.

Original languageEnglish
Article number2200485
JournalAdvanced Electronic Materials
Volume8
Issue number11
DOIs
StatePublished - Nov 2022

Bibliographical note

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

Keywords

  • complementary metal-oxide semiconductor (CMOS) inverter
  • PdSe
  • phase transition
  • polarity control

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