Demonstration of monolithic co-fabrication of Y                         1                         Ba                         2                         Cu                         3                         O                         7-δ                          and CMOS devices on the same sapphire substrate

P. R. De La Houssaye; M. J. Burns; W. J. Ruby; S. D. Russell; S. R. Clayton; G. A. Garcia; L. P. Lee

doi:10.1109/DRC.1993.1009619

Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate

P. R. De La Houssaye
, M. J. Burns
, W. J. Ruby
, S. D. Russell
, S. R. Clayton
, G. A. Garcia
, L. P. Lee

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Original language	English
Article number	1009619
Journal	Device Research Conference - Conference Digest, DRC
Volume	Part F146191
DOIs	https://doi.org/10.1109/DRC.1993.1009619
State	Published - 1993
Event	51st Annual Device Research Conference, DRC 1993 - Santa Barbara, United States Duration: 21 Jun 1993 → 23 Jun 1993

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10.1109/DRC.1993.1009619

Cite this

De La Houssaye, P. R., Burns, M. J., Ruby, W. J., Russell, S. D., Clayton, S. R., Garcia, G. A., & Lee, L. P. (1993). Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate Device Research Conference - Conference Digest, DRC, Part F146191, Article 1009619. https://doi.org/10.1109/DRC.1993.1009619

De La Houssaye, P. R. ; Burns, M. J. ; Ruby, W. J. et al. / Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate In: Device Research Conference - Conference Digest, DRC. 1993 ; Vol. Part F146191.

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title = " Demonstration of monolithic co-fabrication of Y 1 Ba 2 Cu 3 O 7-δ and CMOS devices on the same sapphire substrate ",

author = "\{De La Houssaye\}, \{P. R.\} and Burns, \{M. J.\} and Ruby, \{W. J.\} and Russell, \{S. D.\} and Clayton, \{S. R.\} and Garcia, \{G. A.\} and Lee, \{L. P.\}",

year = "1993",

doi = "10.1109/DRC.1993.1009619",

language = "English",

volume = "Part F146191",

journal = "Device Research Conference - Conference Digest, DRC",

issn = "1548-3770",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "51st Annual Device Research Conference, DRC 1993 ; Conference date: 21-06-1993 Through 23-06-1993",

}

De La Houssaye, PR, Burns, MJ, Ruby, WJ, Russell, SD, Clayton, SR, Garcia, GA & Lee, LP 1993, ' Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate ', Device Research Conference - Conference Digest, DRC, vol. Part F146191, 1009619. https://doi.org/10.1109/DRC.1993.1009619

Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate . / De La Houssaye, P. R.; Burns, M. J.; Ruby, W. J. et al.
In: Device Research Conference - Conference Digest, DRC, Vol. Part F146191, 1009619, 1993.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Demonstration of monolithic co-fabrication of Y 1 Ba 2 Cu 3 O 7-δ and CMOS devices on the same sapphire substrate

AU - De La Houssaye, P. R.

AU - Burns, M. J.

AU - Ruby, W. J.

AU - Russell, S. D.

AU - Clayton, S. R.

AU - Garcia, G. A.

AU - Lee, L. P.

PY - 1993

Y1 - 1993

UR - https://www.scopus.com/pages/publications/33747992443

U2 - 10.1109/DRC.1993.1009619

DO - 10.1109/DRC.1993.1009619

M3 - Conference article

AN - SCOPUS:33747992443

SN - 1548-3770

VL - Part F146191

JO - Device Research Conference - Conference Digest, DRC

JF - Device Research Conference - Conference Digest, DRC

M1 - 1009619

T2 - 51st Annual Device Research Conference, DRC 1993

Y2 - 21 June 1993 through 23 June 1993

ER -

De La Houssaye PR, Burns MJ, Ruby WJ, Russell SD, Clayton SR, Garcia GA et al. Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate Device Research Conference - Conference Digest, DRC. 1993;Part F146191:1009619. doi: 10.1109/DRC.1993.1009619