Demonstration of monolithic co-fabrication of Y                         1                         Ba                         2                         Cu                         3                         O                         7-δ                          and CMOS devices on the same sapphire substrate

P. R. De La Houssaye; M. J. Burns; W. J. Ruby; S. D. Russell; S. R. Clayton; G. A. Garcia; L. P. Lee

doi:10.1109/DRC.1993.1009619

Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate

P. R. De La Houssaye, M. J. Burns, W. J. Ruby, S. D. Russell, S. R. Clayton, G. A. Garcia, L. P. Lee

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Original language	English
Article number	1009619
Journal	Device Research Conference - Conference Digest, DRC
Volume	Part F146191
DOIs	https://doi.org/10.1109/DRC.1993.1009619
State	Published - 1993
Event	51st Annual Device Research Conference, DRC 1993 - Santa Barbara, United States Duration: 21 Jun 1993 → 23 Jun 1993

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10.1109/DRC.1993.1009619

Cite this

De La Houssaye, P. R., Burns, M. J., Ruby, W. J., Russell, S. D., Clayton, S. R., Garcia, G. A., & Lee, L. P. (1993). Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate Device Research Conference - Conference Digest, DRC, Part F146191, Article 1009619. https://doi.org/10.1109/DRC.1993.1009619

De La Houssaye, P. R. ; Burns, M. J. ; Ruby, W. J. et al. / Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate In: Device Research Conference - Conference Digest, DRC. 1993 ; Vol. Part F146191.

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title = " Demonstration of monolithic co-fabrication of Y 1 Ba 2 Cu 3 O 7-δ and CMOS devices on the same sapphire substrate ",

author = "\{De La Houssaye\}, \{P. R.\} and Burns, \{M. J.\} and Ruby, \{W. J.\} and Russell, \{S. D.\} and Clayton, \{S. R.\} and Garcia, \{G. A.\} and Lee, \{L. P.\}",

year = "1993",

doi = "10.1109/DRC.1993.1009619",

language = "English",

volume = "Part F146191",

journal = "Device Research Conference - Conference Digest, DRC",

issn = "1548-3770",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "51st Annual Device Research Conference, DRC 1993 ; Conference date: 21-06-1993 Through 23-06-1993",

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De La Houssaye, PR, Burns, MJ, Ruby, WJ, Russell, SD, Clayton, SR, Garcia, GA & Lee, LP 1993, ' Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate ', Device Research Conference - Conference Digest, DRC, vol. Part F146191, 1009619. https://doi.org/10.1109/DRC.1993.1009619

Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate . / De La Houssaye, P. R.; Burns, M. J.; Ruby, W. J. et al.
In: Device Research Conference - Conference Digest, DRC, Vol. Part F146191, 1009619, 1993.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Demonstration of monolithic co-fabrication of Y 1 Ba 2 Cu 3 O 7-δ and CMOS devices on the same sapphire substrate

AU - De La Houssaye, P. R.

AU - Burns, M. J.

AU - Ruby, W. J.

AU - Russell, S. D.

AU - Clayton, S. R.

AU - Garcia, G. A.

AU - Lee, L. P.

PY - 1993

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DO - 10.1109/DRC.1993.1009619

M3 - Conference article

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SN - 1548-3770

VL - Part F146191

JO - Device Research Conference - Conference Digest, DRC

JF - Device Research Conference - Conference Digest, DRC

M1 - 1009619

T2 - 51st Annual Device Research Conference, DRC 1993

Y2 - 21 June 1993 through 23 June 1993

ER -

De La Houssaye PR, Burns MJ, Ruby WJ, Russell SD, Clayton SR, Garcia GA et al. Demonstration of monolithic co-fabrication of Y ₁ Ba ₂ Cu ₃ O _7-δ and CMOS devices on the same sapphire substrate Device Research Conference - Conference Digest, DRC. 1993;Part F146191:1009619. doi: 10.1109/DRC.1993.1009619