Defect-mode lasing with lowered threshold in a three-layered hetero-cholesteric liquid-crystal structure

Myoung Hoon Song; Na Young Ha; Kazuhiro Amemiya; Byoungchoo Park; Yoichi Takanishi; Ken Ishikawa; Jeong Weon Wu; Suzushi Nishimura; Takehiro Toyooka; Hideo Takezoe

doi:10.1002/adma.200501438

Defect-mode lasing with lowered threshold in a three-layered hetero-cholesteric liquid-crystal structure

Myoung Hoon Song, Na Young Ha, Kazuhiro Amemiya, Byoungchoo Park, Yoichi Takanishi, Ken Ishikawa, Jeong Weon Wu, Suzushi Nishimura, Takehiro Toyooka, Hideo Takezoe

Department of Physics

Research output: Contribution to journal › Article › peer-review

100 Scopus citations

Abstract

A cavity structure for defect-mode lasing with a lowered threshold in three-layered hetero-cholesteric liquid-crystal (CLC) was studied. The cell used for the study consisted of three CLC layers, the middle part of which contained laser dyes and had opposite handedness helix, and a narrower PBG. The study revealed that the defect states emerge and the photonic density of states (DOS) also get enhanced resonantly when the defect mode coincides with the edge mode. The whole system demonstrated certain characteristics - the realization of high-Q cavity, remarkable lowering of the lasing threshold, and the emergence of high DOS.

Original language	English
Pages (from-to)	193-197
Number of pages	5
Journal	Advanced Materials
Volume	18
Issue number	2
DOIs	https://doi.org/10.1002/adma.200501438
State	Published - 19 Jan 2006

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title = "Defect-mode lasing with lowered threshold in a three-layered hetero-cholesteric liquid-crystal structure",

abstract = "A cavity structure for defect-mode lasing with a lowered threshold in three-layered hetero-cholesteric liquid-crystal (CLC) was studied. The cell used for the study consisted of three CLC layers, the middle part of which contained laser dyes and had opposite handedness helix, and a narrower PBG. The study revealed that the defect states emerge and the photonic density of states (DOS) also get enhanced resonantly when the defect mode coincides with the edge mode. The whole system demonstrated certain characteristics - the realization of high-Q cavity, remarkable lowering of the lasing threshold, and the emergence of high DOS.",

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T1 - Defect-mode lasing with lowered threshold in a three-layered hetero-cholesteric liquid-crystal structure

AU - Song, Myoung Hoon

AU - Ha, Na Young

AU - Amemiya, Kazuhiro

AU - Park, Byoungchoo

AU - Takanishi, Yoichi

AU - Ishikawa, Ken

AU - Wu, Jeong Weon

AU - Nishimura, Suzushi

AU - Toyooka, Takehiro

AU - Takezoe, Hideo

PY - 2006/1/19

Y1 - 2006/1/19

N2 - A cavity structure for defect-mode lasing with a lowered threshold in three-layered hetero-cholesteric liquid-crystal (CLC) was studied. The cell used for the study consisted of three CLC layers, the middle part of which contained laser dyes and had opposite handedness helix, and a narrower PBG. The study revealed that the defect states emerge and the photonic density of states (DOS) also get enhanced resonantly when the defect mode coincides with the edge mode. The whole system demonstrated certain characteristics - the realization of high-Q cavity, remarkable lowering of the lasing threshold, and the emergence of high DOS.

AB - A cavity structure for defect-mode lasing with a lowered threshold in three-layered hetero-cholesteric liquid-crystal (CLC) was studied. The cell used for the study consisted of three CLC layers, the middle part of which contained laser dyes and had opposite handedness helix, and a narrower PBG. The study revealed that the defect states emerge and the photonic density of states (DOS) also get enhanced resonantly when the defect mode coincides with the edge mode. The whole system demonstrated certain characteristics - the realization of high-Q cavity, remarkable lowering of the lasing threshold, and the emergence of high DOS.

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JO - Advanced Materials

JF - Advanced Materials

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Defect-mode lasing with lowered threshold in a three-layered hetero-cholesteric liquid-crystal structure

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