Current enhancement with alternating gate voltage in the Coulomb-blockade regime of a single-wall carbon nanotube

H. Y. Yu; D. S. Lee; S. S. Kim; B. Kim; S. W. Lee; J. G. Park; S. H. Lee; G. C. Mcintosh; Y. W. Park; M. S. Kabir; E. E.B. Campbell; S. Roth

doi:10.1007/s00339-004-2906-5

Current enhancement with alternating gate voltage in the Coulomb-blockade regime of a single-wall carbon nanotube

H. Y. Yu
, D. S. Lee
, S. S. Kim
, B. Kim
, S. W. Lee
, J. G. Park
, S. H. Lee
, G. C. Mcintosh
, Y. W. Park
, M. S. Kabir
, E. E.B. Campbell
, S. Roth

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We investigated the current-voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I = ne f, more than 1000 electrons are driven to flow across the source-drain channel at V_DS = 100 mV, 13 MHz of gate voltage (V_p-p = 2 V) and T = 1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.

Original language	English
Pages (from-to)	1613-1615
Number of pages	3
Journal	Applied Physics A: Materials Science and Processing
Volume	79
Issue number	7
DOIs	https://doi.org/10.1007/s00339-004-2906-5
State	Published - Nov 2004

Access to Document

10.1007/s00339-004-2906-5

Cite this

Yu, H. Y., Lee, D. S., Kim, S. S., Kim, B., Lee, S. W., Park, J. G., Lee, S. H., Mcintosh, G. C., Park, Y. W., Kabir, M. S., Campbell, E. E. B., & Roth, S. (2004). Current enhancement with alternating gate voltage in the Coulomb-blockade regime of a single-wall carbon nanotube. Applied Physics A: Materials Science and Processing, 79(7), 1613-1615. https://doi.org/10.1007/s00339-004-2906-5

@article{a830a79290ff4fb3a9f6289e66c15600,

title = "Current enhancement with alternating gate voltage in the Coulomb-blockade regime of a single-wall carbon nanotube",

abstract = "We investigated the current-voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I = ne f, more than 1000 electrons are driven to flow across the source-drain channel at VDS = 100 mV, 13 MHz of gate voltage (Vp-p = 2 V) and T = 1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.",

author = "Yu, \{H. Y.\} and Lee, \{D. S.\} and Kim, \{S. S.\} and B. Kim and Lee, \{S. W.\} and Park, \{J. G.\} and Lee, \{S. H.\} and Mcintosh, \{G. C.\} and Park, \{Y. W.\} and Kabir, \{M. S.\} and Campbell, \{E. E.B.\} and S. Roth",

year = "2004",

month = nov,

doi = "10.1007/s00339-004-2906-5",

language = "English",

volume = "79",

pages = "1613--1615",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "7",

}

TY - JOUR

T1 - Current enhancement with alternating gate voltage in the Coulomb-blockade regime of a single-wall carbon nanotube

AU - Yu, H. Y.

AU - Lee, D. S.

AU - Kim, S. S.

AU - Kim, B.

AU - Lee, S. W.

AU - Park, J. G.

AU - Lee, S. H.

AU - Mcintosh, G. C.

AU - Park, Y. W.

AU - Kabir, M. S.

AU - Campbell, E. E.B.

AU - Roth, S.

PY - 2004/11

Y1 - 2004/11

N2 - We investigated the current-voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I = ne f, more than 1000 electrons are driven to flow across the source-drain channel at VDS = 100 mV, 13 MHz of gate voltage (Vp-p = 2 V) and T = 1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.

AB - We investigated the current-voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I = ne f, more than 1000 electrons are driven to flow across the source-drain channel at VDS = 100 mV, 13 MHz of gate voltage (Vp-p = 2 V) and T = 1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.

UR - https://www.scopus.com/pages/publications/5444230803

U2 - 10.1007/s00339-004-2906-5

DO - 10.1007/s00339-004-2906-5

M3 - Article

AN - SCOPUS:5444230803

SN - 0947-8396

VL - 79

SP - 1613

EP - 1615

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 7

ER -

Current enhancement with alternating gate voltage in the Coulomb-blockade regime of a single-wall carbon nanotube

Abstract

Access to Document

Fingerprint

Cite this