We investigated the current-voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I = ne f, more than 1000 electrons are driven to flow across the source-drain channel at VDS = 100 mV, 13 MHz of gate voltage (Vp-p = 2 V) and T = 1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.
|Number of pages||3|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Nov 2004|