Current-Crowding Effect in Diagonal MOSFET’s

Hyunsang Hwang; Hyungsoon Shir; Dae Gwan Kang; Dong Hyuk Ju

doi:10.1109/55.215201

Current-Crowding Effect in Diagonal MOSFET’s

Hyunsang Hwang, Hyungsoon Shir, Dae Gwan Kang, Dong Hyuk Ju

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this letter, electrical and reliability characteristics of diagonally shaped n-channel MOSFETs have been extensively investigated. Compared with the conventional device structure, diagonal MOSFET’s show longer device lifetime under peak I_subcondition (V_g= 0.5V_d). However, in the high gate bias region (Vg = V_d), diagonal MOSFET’s exhibit a significantly higher degradation rate. From the I_subversus gate voltage characteristics, this larger degradation rate under high gate bias is considered to be due mainly to the current-crowding effect at the drain corner. For a cell-transistor operating condition (V_g> V_d), this current-crowding effect in the diagonal transistor can be a serious reliability concern.

Original language	English
Pages (from-to)	289-291
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1109/55.215201
State	Published - Jun 1993

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title = "Current-Crowding Effect in Diagonal MOSFET{\textquoteright}s",

abstract = "In this letter, electrical and reliability characteristics of diagonally shaped n-channel MOSFETs have been extensively investigated. Compared with the conventional device structure, diagonal MOSFET{\textquoteright}s show longer device lifetime under peak Isubcondition (Vg= 0.5Vd). However, in the high gate bias region (Vg = Vd), diagonal MOSFET{\textquoteright}s exhibit a significantly higher degradation rate. From the Isubversus gate voltage characteristics, this larger degradation rate under high gate bias is considered to be due mainly to the current-crowding effect at the drain corner. For a cell-transistor operating condition (Vg> Vd), this current-crowding effect in the diagonal transistor can be a serious reliability concern.",

author = "Hyunsang Hwang and Hyungsoon Shir and Kang, \{Dae Gwan\} and Ju, \{Dong Hyuk\}",

year = "1993",

month = jun,

doi = "10.1109/55.215201",

language = "English",

volume = "14",

pages = "289--291",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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T1 - Current-Crowding Effect in Diagonal MOSFET’s

AU - Hwang, Hyunsang

AU - Shir, Hyungsoon

AU - Kang, Dae Gwan

AU - Ju, Dong Hyuk

PY - 1993/6

Y1 - 1993/6

N2 - In this letter, electrical and reliability characteristics of diagonally shaped n-channel MOSFETs have been extensively investigated. Compared with the conventional device structure, diagonal MOSFET’s show longer device lifetime under peak Isubcondition (Vg= 0.5Vd). However, in the high gate bias region (Vg = Vd), diagonal MOSFET’s exhibit a significantly higher degradation rate. From the Isubversus gate voltage characteristics, this larger degradation rate under high gate bias is considered to be due mainly to the current-crowding effect at the drain corner. For a cell-transistor operating condition (Vg> Vd), this current-crowding effect in the diagonal transistor can be a serious reliability concern.

AB - In this letter, electrical and reliability characteristics of diagonally shaped n-channel MOSFETs have been extensively investigated. Compared with the conventional device structure, diagonal MOSFET’s show longer device lifetime under peak Isubcondition (Vg= 0.5Vd). However, in the high gate bias region (Vg = Vd), diagonal MOSFET’s exhibit a significantly higher degradation rate. From the Isubversus gate voltage characteristics, this larger degradation rate under high gate bias is considered to be due mainly to the current-crowding effect at the drain corner. For a cell-transistor operating condition (Vg> Vd), this current-crowding effect in the diagonal transistor can be a serious reliability concern.

UR - https://www.scopus.com/pages/publications/0027609420

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DO - 10.1109/55.215201

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VL - 14

SP - 289

EP - 291

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Current-Crowding Effect in Diagonal MOSFET’s

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