Current-Crowding Effect in Diagonal MOSFET’s

Hyunsang Hwang; Hyungsoon Shir; Dae Gwan Kang; Dong Hyuk Ju

doi:10.1109/55.215201

Current-Crowding Effect in Diagonal MOSFET’s

Hyunsang Hwang, Hyungsoon Shir, Dae Gwan Kang, Dong Hyuk Ju

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this letter, electrical and reliability characteristics of diagonally shaped n-channel MOSFETs have been extensively investigated. Compared with the conventional device structure, diagonal MOSFET’s show longer device lifetime under peak I_subcondition (V_g= 0.5V_d). However, in the high gate bias region (Vg = V_d), diagonal MOSFET’s exhibit a significantly higher degradation rate. From the I_subversus gate voltage characteristics, this larger degradation rate under high gate bias is considered to be due mainly to the current-crowding effect at the drain corner. For a cell-transistor operating condition (V_g> V_d), this current-crowding effect in the diagonal transistor can be a serious reliability concern.

Original language	English
Pages (from-to)	289-291
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1109/55.215201
State	Published - Jun 1993

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abstract = "In this letter, electrical and reliability characteristics of diagonally shaped n-channel MOSFETs have been extensively investigated. Compared with the conventional device structure, diagonal MOSFET{\textquoteright}s show longer device lifetime under peak Isubcondition (Vg= 0.5Vd). However, in the high gate bias region (Vg = Vd), diagonal MOSFET{\textquoteright}s exhibit a significantly higher degradation rate. From the Isubversus gate voltage characteristics, this larger degradation rate under high gate bias is considered to be due mainly to the current-crowding effect at the drain corner. For a cell-transistor operating condition (Vg> Vd), this current-crowding effect in the diagonal transistor can be a serious reliability concern.",

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AU - Shir, Hyungsoon

AU - Kang, Dae Gwan

AU - Ju, Dong Hyuk

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N2 - In this letter, electrical and reliability characteristics of diagonally shaped n-channel MOSFETs have been extensively investigated. Compared with the conventional device structure, diagonal MOSFET’s show longer device lifetime under peak Isubcondition (Vg= 0.5Vd). However, in the high gate bias region (Vg = Vd), diagonal MOSFET’s exhibit a significantly higher degradation rate. From the Isubversus gate voltage characteristics, this larger degradation rate under high gate bias is considered to be due mainly to the current-crowding effect at the drain corner. For a cell-transistor operating condition (Vg> Vd), this current-crowding effect in the diagonal transistor can be a serious reliability concern.

AB - In this letter, electrical and reliability characteristics of diagonally shaped n-channel MOSFETs have been extensively investigated. Compared with the conventional device structure, diagonal MOSFET’s show longer device lifetime under peak Isubcondition (Vg= 0.5Vd). However, in the high gate bias region (Vg = Vd), diagonal MOSFET’s exhibit a significantly higher degradation rate. From the Isubversus gate voltage characteristics, this larger degradation rate under high gate bias is considered to be due mainly to the current-crowding effect at the drain corner. For a cell-transistor operating condition (Vg> Vd), this current-crowding effect in the diagonal transistor can be a serious reliability concern.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Current-Crowding Effect in Diagonal MOSFET’s

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