Current-Crowding Effect in Diagonal MOSFET’s

Hyunsang Hwang, Hyungsoon Shir, Dae Gwan Kang, Dong Hyuk Ju

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


In this letter, electrical and reliability characteristics of diagonally shaped n-channel MOSFETs have been extensively investigated. Compared with the conventional device structure, diagonal MOSFET’s show longer device lifetime under peak Isubcondition (Vg= 0.5Vd). However, in the high gate bias region (Vg = Vd), diagonal MOSFET’s exhibit a significantly higher degradation rate. From the Isubversus gate voltage characteristics, this larger degradation rate under high gate bias is considered to be due mainly to the current-crowding effect at the drain corner. For a cell-transistor operating condition (Vg> Vd), this current-crowding effect in the diagonal transistor can be a serious reliability concern.

Original languageEnglish
Pages (from-to)289-291
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 1993


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