CuInSe 2 (CISe) absorber films were prepared by selenizing Cu-In metallic films with seleno-amide in a tube furnace for solar cell fabrication. Seleno-amide used in this study is stable at room temperature and decomposes into H 2Se at below 150°C. Chalcogen amides allow safe transportation and the handling of chalcogen sources that can produce chalcogen hydrides at reasonably low temperature. Post-selenization annealing at 500°C for various time periods were carried out to reverse the indium inhomogeniety created during selenization and to promote further phase transformation. Cu/In ratio of CISe thin films was reduced from ∼1.6 down to ∼0.9 through the post-selenization annealing at 500°C for up to 3 hours. The first batch of cells fabricated with soda-lime glass/Mo/CISe/CdS/ZnO/ZnO:Ga structure exhibited power conversion efficiency up to 1.6% without any optimization.