Crystalline ordered states of CuIn 1-xGa xSe 2 (x = 0, 0.3, and 1.0) thin-films on different substrates investigated by Raman scattering spectroscopy

A. R. Jeong; W. Jo; M. Song; S. Yoon

doi:10.1016/j.matchemphys.2012.03.107

Crystalline ordered states of CuIn _1-xGa _xSe ₂ (x = 0, 0.3, and 1.0) thin-films on different substrates investigated by Raman scattering spectroscopy

A. R. Jeong, W. Jo, M. Song, S. Yoon

Department of Physics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Structural properties of Cu(In,Ga)Se ₂ absorber layers have been examined for photovoltaic applications. Thin-films with three different chemical compositions, CuInSe ₂ (CIS), Cu(In,Ga)Se ₂ (CIGS) and CuGaSe ₂ (CGS), were grown by co-evaporation on two kinds of substrates: Mo-coated soda-lime glass and bare soda-lime glass. Intriguing morphology and grain-growth behaviors were found in the surface of the films. X-ray diffraction of the films exhibited phase formation of the stoichiometric chalcopyrite phase of the materials while signs of secondary phases like Cu ₂Se and Cu-Se ₂ were also observed. The optical transmittance of the films was measured to obtain their optical bandgaps, which were well matched with the bulk values of CIS, CIGS, and CGS, which are 1.1, 1.4, and 1.7 eV, respectively. Using Raman scattering spectroscopy, the A ₁ mode was observed to shift from 177 cm ^-1 for CIS to 189 cm ^-1 for CGS as the Ga content increased. The films on Mo substrates are likely to have secondary phases, which is not the case for soda-lime glass. An indication of the formation of the CuAu structure is obtained from the CIS thin-films.

Original language	English
Pages (from-to)	1030-1035
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	134
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2012.03.107
State	Published - 15 Jun 2012

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2011K000584 ).

Keywords

Cu(In,Ga)Se
Ordered states
Raman scattering spectroscopy
Substrate dependence

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10.1016/j.matchemphys.2012.03.107

Cite this

@article{cded57b80d09455fb704ccd69c161649,

title = "Crystalline ordered states of CuIn 1-xGa xSe 2 (x = 0, 0.3, and 1.0) thin-films on different substrates investigated by Raman scattering spectroscopy",

abstract = "Structural properties of Cu(In,Ga)Se 2 absorber layers have been examined for photovoltaic applications. Thin-films with three different chemical compositions, CuInSe 2 (CIS), Cu(In,Ga)Se 2 (CIGS) and CuGaSe 2 (CGS), were grown by co-evaporation on two kinds of substrates: Mo-coated soda-lime glass and bare soda-lime glass. Intriguing morphology and grain-growth behaviors were found in the surface of the films. X-ray diffraction of the films exhibited phase formation of the stoichiometric chalcopyrite phase of the materials while signs of secondary phases like Cu 2Se and Cu-Se 2 were also observed. The optical transmittance of the films was measured to obtain their optical bandgaps, which were well matched with the bulk values of CIS, CIGS, and CGS, which are 1.1, 1.4, and 1.7 eV, respectively. Using Raman scattering spectroscopy, the A 1 mode was observed to shift from 177 cm -1 for CIS to 189 cm -1 for CGS as the Ga content increased. The films on Mo substrates are likely to have secondary phases, which is not the case for soda-lime glass. An indication of the formation of the CuAu structure is obtained from the CIS thin-films.",

keywords = "Cu(In,Ga)Se, Ordered states, Raman scattering spectroscopy, Substrate dependence",

author = "Jeong, {A. R.} and W. Jo and M. Song and S. Yoon",

note = "Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2011K000584 ).",

year = "2012",

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T1 - Crystalline ordered states of CuIn 1-xGa xSe 2 (x = 0, 0.3, and 1.0) thin-films on different substrates investigated by Raman scattering spectroscopy

AU - Jeong, A. R.

AU - Jo, W.

AU - Song, M.

AU - Yoon, S.

N1 - Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2011K000584 ).

PY - 2012/6/15

Y1 - 2012/6/15

N2 - Structural properties of Cu(In,Ga)Se 2 absorber layers have been examined for photovoltaic applications. Thin-films with three different chemical compositions, CuInSe 2 (CIS), Cu(In,Ga)Se 2 (CIGS) and CuGaSe 2 (CGS), were grown by co-evaporation on two kinds of substrates: Mo-coated soda-lime glass and bare soda-lime glass. Intriguing morphology and grain-growth behaviors were found in the surface of the films. X-ray diffraction of the films exhibited phase formation of the stoichiometric chalcopyrite phase of the materials while signs of secondary phases like Cu 2Se and Cu-Se 2 were also observed. The optical transmittance of the films was measured to obtain their optical bandgaps, which were well matched with the bulk values of CIS, CIGS, and CGS, which are 1.1, 1.4, and 1.7 eV, respectively. Using Raman scattering spectroscopy, the A 1 mode was observed to shift from 177 cm -1 for CIS to 189 cm -1 for CGS as the Ga content increased. The films on Mo substrates are likely to have secondary phases, which is not the case for soda-lime glass. An indication of the formation of the CuAu structure is obtained from the CIS thin-films.

AB - Structural properties of Cu(In,Ga)Se 2 absorber layers have been examined for photovoltaic applications. Thin-films with three different chemical compositions, CuInSe 2 (CIS), Cu(In,Ga)Se 2 (CIGS) and CuGaSe 2 (CGS), were grown by co-evaporation on two kinds of substrates: Mo-coated soda-lime glass and bare soda-lime glass. Intriguing morphology and grain-growth behaviors were found in the surface of the films. X-ray diffraction of the films exhibited phase formation of the stoichiometric chalcopyrite phase of the materials while signs of secondary phases like Cu 2Se and Cu-Se 2 were also observed. The optical transmittance of the films was measured to obtain their optical bandgaps, which were well matched with the bulk values of CIS, CIGS, and CGS, which are 1.1, 1.4, and 1.7 eV, respectively. Using Raman scattering spectroscopy, the A 1 mode was observed to shift from 177 cm -1 for CIS to 189 cm -1 for CGS as the Ga content increased. The films on Mo substrates are likely to have secondary phases, which is not the case for soda-lime glass. An indication of the formation of the CuAu structure is obtained from the CIS thin-films.

KW - Cu(In,Ga)Se

KW - Ordered states

KW - Raman scattering spectroscopy

KW - Substrate dependence

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