Critical quenching speed determining phase of Ge2Sb 2Te5 in phase-change memory

D. S. Suh; K. H.P. Kim; J. S. Noh; W. C. Shin; Y. S. Kang; C. Kim; Y. Khang; I. K. Yoo

doi:10.1109/IEDM.2006.346909

Critical quenching speed determining phase of Ge₂Sb ₂Te₅ in phase-change memory

D. S. Suh, K. H.P. Kim, J. S. Noh, W. C. Shin, Y. S. Kang, C. Kim, Y. Khang, I. K. Yoo

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

During the phase-change process of Ge₂Sb₂Te ₅ in PRAM (Phase-change Random Access Memory), phase-change dynamics are strongly dependent on the quenching speed, i.e. the cooling speed of melted phase-change material. Here we report the relation between quenching speed of programming pulse and phases of Ge₂Sb₂Te₅ in phase-change memory in detail. The existence of critical quenching speed is identified, which determines amorphous and crystalline phases in melting followed by quenching operation.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346909
State	Published - 2006
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: 10 Dec 2006 → 13 Dec 2006

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2006 International Electron Devices Meeting, IEDM
Country/Territory	United States
City	San Francisco, CA
Period	10/12/06 → 13/12/06

Access to Document

10.1109/IEDM.2006.346909

Cite this

Suh, D. S., Kim, K. H. P., Noh, J. S., Shin, W. C., Kang, Y. S., Kim, C., Khang, Y., & Yoo, I. K. (2006). Critical quenching speed determining phase of Ge₂Sb ₂Te₅ in phase-change memory. In 2006 International Electron Devices Meeting Technical Digest, IEDM Article 4154328 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346909

@inproceedings{c176950a1feb41bb81e2e3ffa9604793,

title = "Critical quenching speed determining phase of Ge2Sb 2Te5 in phase-change memory",

abstract = "During the phase-change process of Ge2Sb2Te 5 in PRAM (Phase-change Random Access Memory), phase-change dynamics are strongly dependent on the quenching speed, i.e. the cooling speed of melted phase-change material. Here we report the relation between quenching speed of programming pulse and phases of Ge2Sb2Te5 in phase-change memory in detail. The existence of critical quenching speed is identified, which determines amorphous and crystalline phases in melting followed by quenching operation.",

author = "Suh, \{D. S.\} and Kim, \{K. H.P.\} and Noh, \{J. S.\} and Shin, \{W. C.\} and Kang, \{Y. S.\} and C. Kim and Y. Khang and Yoo, \{I. K.\}",

year = "2006",

doi = "10.1109/IEDM.2006.346909",

language = "English",

isbn = "1424404398",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",

note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",

}

Suh, DS, Kim, KHP, Noh, JS, Shin, WC, Kang, YS, Kim, C, Khang, Y & Yoo, IK 2006, Critical quenching speed determining phase of Ge₂Sb ₂Te₅ in phase-change memory. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154328, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 10/12/06. https://doi.org/10.1109/IEDM.2006.346909

Critical quenching speed determining phase of Ge₂Sb ₂Te₅ in phase-change memory. / Suh, D. S.; Kim, K. H.P.; Noh, J. S. et al.
2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154328 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Critical quenching speed determining phase of Ge2Sb 2Te5 in phase-change memory

AU - Suh, D. S.

AU - Kim, K. H.P.

AU - Noh, J. S.

AU - Shin, W. C.

AU - Kang, Y. S.

AU - Kim, C.

AU - Khang, Y.

AU - Yoo, I. K.

PY - 2006

Y1 - 2006

N2 - During the phase-change process of Ge2Sb2Te 5 in PRAM (Phase-change Random Access Memory), phase-change dynamics are strongly dependent on the quenching speed, i.e. the cooling speed of melted phase-change material. Here we report the relation between quenching speed of programming pulse and phases of Ge2Sb2Te5 in phase-change memory in detail. The existence of critical quenching speed is identified, which determines amorphous and crystalline phases in melting followed by quenching operation.

AB - During the phase-change process of Ge2Sb2Te 5 in PRAM (Phase-change Random Access Memory), phase-change dynamics are strongly dependent on the quenching speed, i.e. the cooling speed of melted phase-change material. Here we report the relation between quenching speed of programming pulse and phases of Ge2Sb2Te5 in phase-change memory in detail. The existence of critical quenching speed is identified, which determines amorphous and crystalline phases in melting followed by quenching operation.

UR - https://www.scopus.com/pages/publications/46049117878

U2 - 10.1109/IEDM.2006.346909

DO - 10.1109/IEDM.2006.346909

M3 - Conference contribution

AN - SCOPUS:46049117878

SN - 1424404398

SN - 9781424404391

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2006 International Electron Devices Meeting Technical Digest, IEDM

T2 - 2006 International Electron Devices Meeting, IEDM

Y2 - 10 December 2006 through 13 December 2006

ER -