Critical quenching speed determining phase of Ge2Sb 2Te5 in phase-change memory

D. S. Suh, K. H.P. Kim, J. S. Noh, W. C. Shin, Y. S. Kang, C. Kim, Y. Khang, I. K. Yoo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

During the phase-change process of Ge2Sb2Te 5 in PRAM (Phase-change Random Access Memory), phase-change dynamics are strongly dependent on the quenching speed, i.e. the cooling speed of melted phase-change material. Here we report the relation between quenching speed of programming pulse and phases of Ge2Sb2Te5 in phase-change memory in detail. The existence of critical quenching speed is identified, which determines amorphous and crystalline phases in melting followed by quenching operation.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
StatePublished - 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 10 Dec 200613 Dec 2006

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2006 International Electron Devices Meeting, IEDM
Country/TerritoryUnited States
CitySan Francisco, CA
Period10/12/0613/12/06

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