@inproceedings{c176950a1feb41bb81e2e3ffa9604793,
title = "Critical quenching speed determining phase of Ge2Sb 2Te5 in phase-change memory",
abstract = "During the phase-change process of Ge2Sb2Te 5 in PRAM (Phase-change Random Access Memory), phase-change dynamics are strongly dependent on the quenching speed, i.e. the cooling speed of melted phase-change material. Here we report the relation between quenching speed of programming pulse and phases of Ge2Sb2Te5 in phase-change memory in detail. The existence of critical quenching speed is identified, which determines amorphous and crystalline phases in melting followed by quenching operation.",
author = "Suh, {D. S.} and Kim, {K. H.P.} and Noh, {J. S.} and Shin, {W. C.} and Kang, {Y. S.} and C. Kim and Y. Khang and Yoo, {I. K.}",
year = "2006",
doi = "10.1109/IEDM.2006.346909",
language = "English",
isbn = "1424404398",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",
note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",
}