Corrigendum to “Density functional theory study on the modification of silicon nitride surface by fluorine-containing molecules” [Appl. Surf. Sci. 554 (2021) 149481] (Applied Surface Science (2021) 554, (S0169433221005572), (10.1016/j.apsusc.2021.149481))

The authors regret an incorrect activation energy value in Table 1. When constructing Table 1, we used the activation energy value taken from the reference [1] for the fluorination reaction of silicon oxide with HF. However, the value was corrected from 0.18 eV to 0.77 eV in the erratum [2]. Therefore, we would like to provide the new Table 1 with the corrected value. The third sentence in the second paragraph of page 8 should now read, as follows: The E_A values for the fluorination reaction of silicon oxide and silicon surfaces by HF were 0.77 eV and 1.22 eV, as presented in the previous report [22], while it is 2.07 eV for silicon nitride as determined in the present work”. Also, the third sentence of the fourth paragraph of page 8 should now read, as follows: In the TS on the silicon oxide or silicon substrate, a four-membered ring (–Si–O–H–F–) geometry is formed, or the HF is bonded to SiH* to form SiH₂F* [22]. These corrections do not change the overall conclusion of the paper. The authors would like to apologize for any inconvenience caused.