Correlation between Symmetry and Phase Transition Temperature of VO2 Films Deposited on Al2O3 Substrates with Various Orientations

Yesul Choi; Dooyong Lee; Sehwan Song; Jiwoong Kim; Tae Seong Ju; Hyegyeong Kim; Jayeong Kim; Seokhyun Yoon; Yunseok Kim; Thang Bach Phan; Jong Seong Bae; Sungkyun Park

doi:10.1002/aelm.202000874

Correlation between Symmetry and Phase Transition Temperature of VO₂ Films Deposited on Al₂O₃ Substrates with Various Orientations

Yesul Choi, Dooyong Lee, Sehwan Song, Jiwoong Kim, Tae Seong Ju, Hyegyeong Kim, Jayeong Kim, Seokhyun Yoon, Yunseok Kim, Thang Bach Phan, Jong Seong Bae, Sungkyun Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The structural aspects of the insulator–metal transition (IMT) characteristics of VO₂ are sensitive to the octahedral symmetry variation of VO₆. By varying substrate orientation (c-, a-, and m-plane Al₂O₃), the correlation between IMT temperature and local symmetry is investigated. For a VO₂ film deposited on m-plane Al₂O₃, which has high symmetry due to fewer domain boundaries induced by m-plane Al₂O₃, the IMT temperature is low (326.47 K). In contrast, for a film deposited on c-plane Al₂O₃ (having lower symmetry), the IMT temperature is the highest (336.74 K) among the films used in this work. Furthermore, temperature-dependent Raman spectra reveals that the structural phase transition temperature decreases in the order of the VO₂ film deposited on c-, a-, and m-plane Al₂O₃, suggesting that the symmetrical structure reduces the activation energy for IMT by decreasing thermodynamic energy. These results demonstrate that structural symmetry plays a crucial role in lowering the transition temperature.

Original language	English
Article number	2000874
Journal	Advanced Electronic Materials
Volume	7
Issue number	4
DOIs	https://doi.org/10.1002/aelm.202000874
State	Published - Apr 2021

Bibliographical note

Funding Information:
Y.C. and D.L. contributed equally to this work. This study was supported in part by NRF‐Korea (NRF‐2018R1D1A1B07045663 and NRF‐2020K1A3A7A09077715).

Funding Information:
Y.C. and D.L. contributed equally to this work. This study was supported in part by NRF-Korea (NRF-2018R1D1A1B07045663 and NRF-2020K1A3A7A09077715).

Publisher Copyright:
© 2021 Wiley-VCH GmbH

Keywords

activation energy
local structural symmetry
phase transitions
VO

Access to Document

10.1002/aelm.202000874

Cite this

@article{aff32f553e61402aa2808e514b870de1,

title = "Correlation between Symmetry and Phase Transition Temperature of VO2 Films Deposited on Al2O3 Substrates with Various Orientations",

abstract = "The structural aspects of the insulator–metal transition (IMT) characteristics of VO2 are sensitive to the octahedral symmetry variation of VO6. By varying substrate orientation (c-, a-, and m-plane Al2O3), the correlation between IMT temperature and local symmetry is investigated. For a VO2 film deposited on m-plane Al2O3, which has high symmetry due to fewer domain boundaries induced by m-plane Al2O3, the IMT temperature is low (326.47 K). In contrast, for a film deposited on c-plane Al2O3 (having lower symmetry), the IMT temperature is the highest (336.74 K) among the films used in this work. Furthermore, temperature-dependent Raman spectra reveals that the structural phase transition temperature decreases in the order of the VO2 film deposited on c-, a-, and m-plane Al2O3, suggesting that the symmetrical structure reduces the activation energy for IMT by decreasing thermodynamic energy. These results demonstrate that structural symmetry plays a crucial role in lowering the transition temperature.",

keywords = "activation energy, local structural symmetry, phase transitions, VO",

author = "Yesul Choi and Dooyong Lee and Sehwan Song and Jiwoong Kim and Ju, {Tae Seong} and Hyegyeong Kim and Jayeong Kim and Seokhyun Yoon and Yunseok Kim and Phan, {Thang Bach} and Bae, {Jong Seong} and Sungkyun Park",

note = "Funding Information: Y.C. and D.L. contributed equally to this work. This study was supported in part by NRF‐Korea (NRF‐2018R1D1A1B07045663 and NRF‐2020K1A3A7A09077715). Funding Information: Y.C. and D.L. contributed equally to this work. This study was supported in part by NRF-Korea (NRF-2018R1D1A1B07045663 and NRF-2020K1A3A7A09077715). Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

year = "2021",

month = apr,

doi = "10.1002/aelm.202000874",

language = "English",

volume = "7",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

number = "4",

}

TY - JOUR

T1 - Correlation between Symmetry and Phase Transition Temperature of VO2 Films Deposited on Al2O3 Substrates with Various Orientations

AU - Choi, Yesul

AU - Lee, Dooyong

AU - Song, Sehwan

AU - Kim, Jiwoong

AU - Ju, Tae Seong

AU - Kim, Hyegyeong

AU - Kim, Jayeong

AU - Yoon, Seokhyun

AU - Kim, Yunseok

AU - Phan, Thang Bach

AU - Bae, Jong Seong

AU - Park, Sungkyun

N1 - Funding Information: Y.C. and D.L. contributed equally to this work. This study was supported in part by NRF‐Korea (NRF‐2018R1D1A1B07045663 and NRF‐2020K1A3A7A09077715). Funding Information: Y.C. and D.L. contributed equally to this work. This study was supported in part by NRF-Korea (NRF-2018R1D1A1B07045663 and NRF-2020K1A3A7A09077715). Publisher Copyright: © 2021 Wiley-VCH GmbH

PY - 2021/4

Y1 - 2021/4

N2 - The structural aspects of the insulator–metal transition (IMT) characteristics of VO2 are sensitive to the octahedral symmetry variation of VO6. By varying substrate orientation (c-, a-, and m-plane Al2O3), the correlation between IMT temperature and local symmetry is investigated. For a VO2 film deposited on m-plane Al2O3, which has high symmetry due to fewer domain boundaries induced by m-plane Al2O3, the IMT temperature is low (326.47 K). In contrast, for a film deposited on c-plane Al2O3 (having lower symmetry), the IMT temperature is the highest (336.74 K) among the films used in this work. Furthermore, temperature-dependent Raman spectra reveals that the structural phase transition temperature decreases in the order of the VO2 film deposited on c-, a-, and m-plane Al2O3, suggesting that the symmetrical structure reduces the activation energy for IMT by decreasing thermodynamic energy. These results demonstrate that structural symmetry plays a crucial role in lowering the transition temperature.

AB - The structural aspects of the insulator–metal transition (IMT) characteristics of VO2 are sensitive to the octahedral symmetry variation of VO6. By varying substrate orientation (c-, a-, and m-plane Al2O3), the correlation between IMT temperature and local symmetry is investigated. For a VO2 film deposited on m-plane Al2O3, which has high symmetry due to fewer domain boundaries induced by m-plane Al2O3, the IMT temperature is low (326.47 K). In contrast, for a film deposited on c-plane Al2O3 (having lower symmetry), the IMT temperature is the highest (336.74 K) among the films used in this work. Furthermore, temperature-dependent Raman spectra reveals that the structural phase transition temperature decreases in the order of the VO2 film deposited on c-, a-, and m-plane Al2O3, suggesting that the symmetrical structure reduces the activation energy for IMT by decreasing thermodynamic energy. These results demonstrate that structural symmetry plays a crucial role in lowering the transition temperature.

KW - activation energy

KW - local structural symmetry

KW - phase transitions

KW - VO

UR - http://www.scopus.com/inward/record.url?scp=85099990801&partnerID=8YFLogxK

U2 - 10.1002/aelm.202000874

DO - 10.1002/aelm.202000874

M3 - Article

AN - SCOPUS:85099990801

SN - 2199-160X

VL - 7

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 4

M1 - 2000874

ER -