Correction:Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4Se9(Adv. Mater., (2022), 34, (2204982), 10.1002/adma.202204982)

Gichang Noh; Hwayoung Song; Heenang Choi; Mingyu Kim; Jae Hwan Jeong; Yongjoon Lee; Min Yeong Choi; Saeyoung Oh; Min kyung Jo; Dong Yeon Woo; Yooyeon Jo; Eunpyo Park; Eoram Moon; Tae Soo Kim; Hyun Jun Chai; Woong Huh; Chul Ho Lee; Cheol Joo Kim; Heejun Yang; Seungwoo Song; Hu Young Jeong; Yong Sung Kim; Gwan Hyoung Lee; Jongsun Lim; Chang Gyoun Kim; Taek Mo Chung; Joon Young Kwak; Kibum Kang

doi:10.1002/adma.202300755

Correction:Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge₄Se₉(Adv. Mater., (2022), 34, (2204982), 10.1002/adma.202204982)

Gichang Noh
, Hwayoung Song
, Heenang Choi
, Mingyu Kim
, Jae Hwan Jeong
, Yongjoon Lee
, Min Yeong Choi
, Saeyoung Oh
, Min kyung Jo
, Dong Yeon Woo
, Yooyeon Jo
, Eunpyo Park
, Eoram Moon
, Tae Soo Kim
, Hyun Jun Chai
, Woong Huh
, Chul Ho Lee
, Cheol Joo Kim
, Heejun Yang
, Seungwoo Song

Hu Young Jeong, Yong Sung Kim, Gwan Hyoung Lee, Jongsun Lim, Chang Gyoun Kim, Taek Mo Chung, Joon Young Kwak, Kibum Kang

Semiconductor Engineering

Research output: Contribution to journal › Comment/debate

Abstract

Adv. Mater. 2022, 34, 2204982 DO: 10.1002/adma.202204982 When originally published, the author name Seungwoo Song was spelled incorrectly. This is hereby corrected as shown in author line above; the author line in the online version of the article has also been corrected accordingly.

Original language	English
Article number	2300755
Journal	Advanced Materials
Volume	35
Issue number	13
DOIs	https://doi.org/10.1002/adma.202300755
State	Published - 29 Mar 2023

Bibliographical note

Publisher Copyright:
© 2023 Wiley-VCH GmbH.

Access to Document

10.1002/adma.202300755

Cite this

Noh, G., Song, H., Choi, H., Kim, M., Jeong, J. H., Lee, Y., Choi, M. Y., Oh, S., Jo, M. K., Woo, D. Y., Jo, Y., Park, E., Moon, E., Kim, T. S., Chai, H. J., Huh, W., Lee, C. H., Kim, C. J., Yang, H., ... Kang, K. (2023). Correction:Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge₄Se₉(Adv. Mater., (2022), 34, (2204982), 10.1002/adma.202204982). Advanced Materials, 35(13), Article 2300755. https://doi.org/10.1002/adma.202300755

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title = "Correction:Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4Se9(Adv. Mater., (2022), 34, (2204982), 10.1002/adma.202204982)",

abstract = "Adv. Mater. 2022, 34, 2204982 DO: 10.1002/adma.202204982 When originally published, the author name Seungwoo Song was spelled incorrectly. This is hereby corrected as shown in author line above; the author line in the online version of the article has also been corrected accordingly.",

author = "Gichang Noh and Hwayoung Song and Heenang Choi and Mingyu Kim and Jeong, \{Jae Hwan\} and Yongjoon Lee and Choi, \{Min Yeong\} and Saeyoung Oh and Jo, \{Min kyung\} and Woo, \{Dong Yeon\} and Yooyeon Jo and Eunpyo Park and Eoram Moon and Kim, \{Tae Soo\} and Chai, \{Hyun Jun\} and Woong Huh and Lee, \{Chul Ho\} and Kim, \{Cheol Joo\} and Heejun Yang and Seungwoo Song and Jeong, \{Hu Young\} and Kim, \{Yong Sung\} and Lee, \{Gwan Hyoung\} and Jongsun Lim and Kim, \{Chang Gyoun\} and Chung, \{Taek Mo\} and Kwak, \{Joon Young\} and Kibum Kang",

note = "Publisher Copyright: {\textcopyright} 2023 Wiley-VCH GmbH.",

year = "2023",

month = mar,

day = "29",

doi = "10.1002/adma.202300755",

language = "English",

volume = "35",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "13",

}

Noh, G, Song, H, Choi, H, Kim, M, Jeong, JH, Lee, Y, Choi, MY, Oh, S, Jo, MK, Woo, DY, Jo, Y, Park, E, Moon, E, Kim, TS, Chai, HJ, Huh, W, Lee, CH, Kim, CJ, Yang, H, Song, S, Jeong, HY, Kim, YS, Lee, GH, Lim, J, Kim, CG, Chung, TM, Kwak, JY & Kang, K 2023, 'Correction:Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge₄Se₉(Adv. Mater., (2022), 34, (2204982), 10.1002/adma.202204982)', Advanced Materials, vol. 35, no. 13, 2300755. https://doi.org/10.1002/adma.202300755

TY - JOUR

T1 - Correction:Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4Se9(Adv. Mater., (2022), 34, (2204982), 10.1002/adma.202204982)

AU - Noh, Gichang

AU - Song, Hwayoung

AU - Choi, Heenang

AU - Kim, Mingyu

AU - Jeong, Jae Hwan

AU - Lee, Yongjoon

AU - Choi, Min Yeong

AU - Oh, Saeyoung

AU - Jo, Min kyung

AU - Woo, Dong Yeon

AU - Jo, Yooyeon

AU - Park, Eunpyo

AU - Moon, Eoram

AU - Kim, Tae Soo

AU - Chai, Hyun Jun

AU - Huh, Woong

AU - Lee, Chul Ho

AU - Kim, Cheol Joo

AU - Yang, Heejun

AU - Song, Seungwoo

AU - Jeong, Hu Young

AU - Kim, Yong Sung

AU - Lee, Gwan Hyoung

AU - Lim, Jongsun

AU - Kim, Chang Gyoun

AU - Chung, Taek Mo

AU - Kwak, Joon Young

AU - Kang, Kibum

PY - 2023/3/29

Y1 - 2023/3/29

N2 - Adv. Mater. 2022, 34, 2204982 DO: 10.1002/adma.202204982 When originally published, the author name Seungwoo Song was spelled incorrectly. This is hereby corrected as shown in author line above; the author line in the online version of the article has also been corrected accordingly.

AB - Adv. Mater. 2022, 34, 2204982 DO: 10.1002/adma.202204982 When originally published, the author name Seungwoo Song was spelled incorrectly. This is hereby corrected as shown in author line above; the author line in the online version of the article has also been corrected accordingly.

UR - https://www.scopus.com/pages/publications/85151090704

U2 - 10.1002/adma.202300755

DO - 10.1002/adma.202300755

M3 - Comment/debate

AN - SCOPUS:85151090704

SN - 0935-9648

VL - 35

JO - Advanced Materials

JF - Advanced Materials

IS - 13

M1 - 2300755

ER -