TY - GEN
T1 - Core-Shell Dual-Gate Nanowire Synaptic Transistor with Short/Long-Term Plasticity
AU - Raza Ansari, Md Hasan
AU - Kim, Daehwan
AU - Cho, Seongjae
AU - Lee, Jong Ho
AU - Park, Byung Gook
N1 - Funding Information:
Acknowledgments This work was supported in part by Nano · Material Technology Development Program through the National Research Foundation (NRF) funded by the Ministry of Science and ICT (MSIT) under Grant NRF-2016M3A7B4910348, and in part by Institute of Information and Communications Technology Planning and Evaluation (IITP) grant funded by MSIT under Grant 2020-0-01294-001.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/4/8
Y1 - 2021/4/8
N2 - This work demonstrates design and performances of core-shell dual-gate nanowire synaptic transistor with short/long term plasticity. The novel structure helps equip better capacitive coupling between dual gates through full depletion of carriers from the Si channel and construct deeper potential well for charge storage, which eventually increases the probability for short-term-to-long-term memory transition by reducing the recombination. The dual-gate operation effectively realizes the short-and the long-term potentiation in the proposed device for hardware-driven neuromorphic system.
AB - This work demonstrates design and performances of core-shell dual-gate nanowire synaptic transistor with short/long term plasticity. The novel structure helps equip better capacitive coupling between dual gates through full depletion of carriers from the Si channel and construct deeper potential well for charge storage, which eventually increases the probability for short-term-to-long-term memory transition by reducing the recombination. The dual-gate operation effectively realizes the short-and the long-term potentiation in the proposed device for hardware-driven neuromorphic system.
KW - core-shell dual-gate
KW - neuromorphic hardware
KW - short-term plasticity
KW - synaptic transistor
UR - http://www.scopus.com/inward/record.url?scp=85106483874&partnerID=8YFLogxK
U2 - 10.1109/EDTM50988.2021.9420876
DO - 10.1109/EDTM50988.2021.9420876
M3 - Conference contribution
AN - SCOPUS:85106483874
T3 - 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
BT - 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Y2 - 8 April 2021 through 11 April 2021
ER -