TY - JOUR
T1 - Core-Shell Dual-Gate Nanowire Memory as a Synaptic Device for Neuromorphic Application
AU - Ansari, Md Hasan Raza
AU - Cho, Seongjae
AU - Lee, Jong Ho
AU - Park, Byung Gook
N1 - Funding Information:
This work was supported in part by the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (MSIT) (Nano Material Technology Development Program, 50%) under Grant 2016M3A7B4910348, and in part by the Institute of Information and Communications Technology Planning and Evaluation (IITP) Grant funded by the Korea Government (MSIT, Development of IoT Based Edge Computing Ultra-Low Power Artificial Intelligence Processor, 50%) under Grant 2020-0-01294. Extended from a Conference: Preliminary results of this paper were presented at the 5th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021.
Publisher Copyright:
© 2013 IEEE.
PY - 2021
Y1 - 2021
N2 - In this work, a synaptic device for neuromorphic system is proposed and designed to emulate the biological behaviors in the novel device structure of core-shell dual-gate (CSDG) nanowire flash memory. Floating-body effect in the device and charge trapping/de-trapping in the nitride layer are found to be effective for short-term potentiation (STP), long-term potentiation (LTP), and long-term depression (LTD), respectively. STP realizes a temporary potentiation in the artificial neural network, and it can transit to LTP through the process of rehearsal and meaningful association. The transition takes place at the 10th pulse in a permissibly optimized CSDG synaptic device. The proposed device shows a stronger capacitive coupling between the dual gates, which forms a deeper potential well for charge storing and achieves better memory performance metrics such as sensing margin and retention time. The series of results reveal that the synaptic memory device is applicable to neuromorphic system due to the stronger gate controllability, multi-level weight adjustability, and Si processing compatibility.
AB - In this work, a synaptic device for neuromorphic system is proposed and designed to emulate the biological behaviors in the novel device structure of core-shell dual-gate (CSDG) nanowire flash memory. Floating-body effect in the device and charge trapping/de-trapping in the nitride layer are found to be effective for short-term potentiation (STP), long-term potentiation (LTP), and long-term depression (LTD), respectively. STP realizes a temporary potentiation in the artificial neural network, and it can transit to LTP through the process of rehearsal and meaningful association. The transition takes place at the 10th pulse in a permissibly optimized CSDG synaptic device. The proposed device shows a stronger capacitive coupling between the dual gates, which forms a deeper potential well for charge storing and achieves better memory performance metrics such as sensing margin and retention time. The series of results reveal that the synaptic memory device is applicable to neuromorphic system due to the stronger gate controllability, multi-level weight adjustability, and Si processing compatibility.
KW - Si processing compatibility
KW - Synaptic device
KW - and long-term depression (LTD)
KW - core-shell dual-gate
KW - flash memory
KW - long-term potentiation (LTP)
KW - nanowire
KW - neuromorphic system
KW - short-term potentiation (STP)
UR - http://www.scopus.com/inward/record.url?scp=85114742940&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2021.3111343
DO - 10.1109/JEDS.2021.3111343
M3 - Article
AN - SCOPUS:85114742940
SN - 2168-6734
VL - 9
SP - 1282
EP - 1289
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
ER -