Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate

Y. U. Lee; J. H. Woo; E. Choi; E. S. Kim; B. Kang; J. Kim; B. C. Park; J. H. Kim; J. W. Wu

doi:10.1109/OECC.2012.6276793

Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate

Y. U. Lee
, J. H. Woo
, E. Choi
, E. S. Kim
, B. Kang
, J. Kim
, B. C. Park
, J. H. Kim
, J. W. Wu

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Doping level of dopant carrier density of substrates is varied to control the meta-resonances in terahertz metamaterials. Resonance peak position and quality factor exhibit a red shift and broadening when doping level is lowered.

Original language	English
Title of host publication	Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012
Pages	689-690
Number of pages	2
DOIs	https://doi.org/10.1109/OECC.2012.6276793
State	Published - 2012
Event	2012 17th Opto-Electronics and Communications Conference, OECC 2012 - Busan, Korea, Republic of Duration: 2 Jul 2012 → 6 Jul 2012

Publication series

Name	Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012

Conference

Conference	2012 17th Opto-Electronics and Communications Conference, OECC 2012
Country/Territory	Korea, Republic of
City	Busan
Period	2/07/12 → 6/07/12

Access to Document

10.1109/OECC.2012.6276793

Cite this

Lee, Y. U., Woo, J. H., Choi, E., Kim, E. S., Kang, B., Kim, J., Park, B. C., Kim, J. H., & Wu, J. W. (2012). Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate. In Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 (pp. 689-690). Article 6276793 (Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012). https://doi.org/10.1109/OECC.2012.6276793

@inproceedings{3316f0f70a264226abd3b691b5e53b7c,

title = "Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate",

abstract = "Doping level of dopant carrier density of substrates is varied to control the meta-resonances in terahertz metamaterials. Resonance peak position and quality factor exhibit a red shift and broadening when doping level is lowered.",

author = "Lee, \{Y. U.\} and Woo, \{J. H.\} and E. Choi and Kim, \{E. S.\} and B. Kang and J. Kim and Park, \{B. C.\} and Kim, \{J. H.\} and Wu, \{J. W.\}",

year = "2012",

doi = "10.1109/OECC.2012.6276793",

language = "English",

isbn = "9781467309776",

series = "Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012",

pages = "689--690",

booktitle = "Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012",

note = "2012 17th Opto-Electronics and Communications Conference, OECC 2012 ; Conference date: 02-07-2012 Through 06-07-2012",

}

Lee, YU, Woo, JH, Choi, E, Kim, ES, Kang, B, Kim, J, Park, BC, Kim, JH & Wu, JW 2012, Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate. in Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012., 6276793, Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012, pp. 689-690, 2012 17th Opto-Electronics and Communications Conference, OECC 2012, Busan, Korea, Republic of, 2/07/12. https://doi.org/10.1109/OECC.2012.6276793

Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate. / Lee, Y. U.; Woo, J. H.; Choi, E. et al.
Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012. 2012. p. 689-690 6276793 (Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate

AU - Lee, Y. U.

AU - Woo, J. H.

AU - Choi, E.

AU - Kim, E. S.

AU - Kang, B.

AU - Kim, J.

AU - Park, B. C.

AU - Kim, J. H.

AU - Wu, J. W.

PY - 2012

Y1 - 2012

N2 - Doping level of dopant carrier density of substrates is varied to control the meta-resonances in terahertz metamaterials. Resonance peak position and quality factor exhibit a red shift and broadening when doping level is lowered.

AB - Doping level of dopant carrier density of substrates is varied to control the meta-resonances in terahertz metamaterials. Resonance peak position and quality factor exhibit a red shift and broadening when doping level is lowered.

UR - https://www.scopus.com/pages/publications/84867600198

U2 - 10.1109/OECC.2012.6276793

DO - 10.1109/OECC.2012.6276793

M3 - Conference contribution

AN - SCOPUS:84867600198

SN - 9781467309776

T3 - Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012

SP - 689

EP - 690

BT - Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012

T2 - 2012 17th Opto-Electronics and Communications Conference, OECC 2012

Y2 - 2 July 2012 through 6 July 2012

ER -

Lee YU, Woo JH, Choi E, Kim ES, Kang B, Kim J et al. Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate. In Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012. 2012. p. 689-690. 6276793. (Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012). doi: 10.1109/OECC.2012.6276793

Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate

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