Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate

Y. U. Lee, J. H. Woo, E. Choi, E. S. Kim, B. Kang, J. Kim, B. C. Park, J. H. Kim, J. W. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Doping level of dopant carrier density of substrates is varied to control the meta-resonances in terahertz metamaterials. Resonance peak position and quality factor exhibit a red shift and broadening when doping level is lowered.

Original languageEnglish
Title of host publicationTechnical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012
Pages689-690
Number of pages2
DOIs
StatePublished - 2012
Event2012 17th Opto-Electronics and Communications Conference, OECC 2012 - Busan, Korea, Republic of
Duration: 2 Jul 20126 Jul 2012

Publication series

NameTechnical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012

Conference

Conference2012 17th Opto-Electronics and Communications Conference, OECC 2012
Country/TerritoryKorea, Republic of
CityBusan
Period2/07/126/07/12

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