Control of carbon nanotube morphology by change of applied bias field during growth

L. H. Chen; J. F. AuBuchon; A. Gapin; C. Daraio; P. Bandaru; S. Jin; D. W. Kim; I. K. Yoo; C. M. Wang

doi:10.1063/1.1830081

Control of carbon nanotube morphology by change of applied bias field during growth

L. H. Chen
, J. F. AuBuchon
, A. Gapin
, C. Daraio
, P. Bandaru
, S. Jin
, D. W. Kim
, I. K. Yoo
, C. M. Wang

Department of Physics

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

Carbon nanotube morphology has been engineered via simple control of applied voltage during dc plasma chemical vapor deposition growth. Below a critical applied voltage, a nanotube configuration of vertically aligned tubes with a constant diameter is obtained. Above the critical voltage, a nanocone-type configuration is obtained. The strongly field-dependent transition in morphology is attributed primarily to the plasma etching and decrease in the size of nanotube-nucleating catalyst particles. A two-step control of applied voltage allows a creation of dual-structured nanotube morphology consisting of a broad base nanocone (∼200 nm dia.) with a small diameter nanotube (∼7 nm) vertically emanating from the apex of the nanocone, which may be useful for atomic force microscopy.

Original language	English
Article number	3
Pages (from-to)	5373-5375
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	22
DOIs	https://doi.org/10.1063/1.1830081
State	Published - 29 Nov 2004

Bibliographical note

Funding Information:
The authors acknowledge the support of the work by University of California Discovery Fund under Grant No. ele02-10133/Jin, NSF NIRTs under Grant Nos. DMI-0210559 and DMI-0303790, and Lawrence Livermore National Laboratory under Grant No. MI-04-006.

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10.1063/1.1830081

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title = "Control of carbon nanotube morphology by change of applied bias field during growth",

abstract = "Carbon nanotube morphology has been engineered via simple control of applied voltage during dc plasma chemical vapor deposition growth. Below a critical applied voltage, a nanotube configuration of vertically aligned tubes with a constant diameter is obtained. Above the critical voltage, a nanocone-type configuration is obtained. The strongly field-dependent transition in morphology is attributed primarily to the plasma etching and decrease in the size of nanotube-nucleating catalyst particles. A two-step control of applied voltage allows a creation of dual-structured nanotube morphology consisting of a broad base nanocone (∼200 nm dia.) with a small diameter nanotube (∼7 nm) vertically emanating from the apex of the nanocone, which may be useful for atomic force microscopy.",

author = "Chen, \{L. H.\} and AuBuchon, \{J. F.\} and A. Gapin and C. Daraio and P. Bandaru and S. Jin and Kim, \{D. W.\} and Yoo, \{I. K.\} and Wang, \{C. M.\}",

note = "Funding Information: The authors acknowledge the support of the work by University of California Discovery Fund under Grant No. ele02-10133/Jin, NSF NIRTs under Grant Nos. DMI-0210559 and DMI-0303790, and Lawrence Livermore National Laboratory under Grant No. MI-04-006.",

year = "2004",

month = nov,

day = "29",

doi = "10.1063/1.1830081",

language = "English",

volume = "85",

pages = "5373--5375",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Control of carbon nanotube morphology by change of applied bias field during growth

AU - Chen, L. H.

AU - AuBuchon, J. F.

AU - Gapin, A.

AU - Daraio, C.

AU - Bandaru, P.

AU - Jin, S.

AU - Kim, D. W.

AU - Yoo, I. K.

AU - Wang, C. M.

N1 - Funding Information: The authors acknowledge the support of the work by University of California Discovery Fund under Grant No. ele02-10133/Jin, NSF NIRTs under Grant Nos. DMI-0210559 and DMI-0303790, and Lawrence Livermore National Laboratory under Grant No. MI-04-006.

PY - 2004/11/29

Y1 - 2004/11/29

N2 - Carbon nanotube morphology has been engineered via simple control of applied voltage during dc plasma chemical vapor deposition growth. Below a critical applied voltage, a nanotube configuration of vertically aligned tubes with a constant diameter is obtained. Above the critical voltage, a nanocone-type configuration is obtained. The strongly field-dependent transition in morphology is attributed primarily to the plasma etching and decrease in the size of nanotube-nucleating catalyst particles. A two-step control of applied voltage allows a creation of dual-structured nanotube morphology consisting of a broad base nanocone (∼200 nm dia.) with a small diameter nanotube (∼7 nm) vertically emanating from the apex of the nanocone, which may be useful for atomic force microscopy.

AB - Carbon nanotube morphology has been engineered via simple control of applied voltage during dc plasma chemical vapor deposition growth. Below a critical applied voltage, a nanotube configuration of vertically aligned tubes with a constant diameter is obtained. Above the critical voltage, a nanocone-type configuration is obtained. The strongly field-dependent transition in morphology is attributed primarily to the plasma etching and decrease in the size of nanotube-nucleating catalyst particles. A two-step control of applied voltage allows a creation of dual-structured nanotube morphology consisting of a broad base nanocone (∼200 nm dia.) with a small diameter nanotube (∼7 nm) vertically emanating from the apex of the nanocone, which may be useful for atomic force microscopy.

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JF - Applied Physics Letters

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Control of carbon nanotube morphology by change of applied bias field during growth

Abstract

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