Contact barriers in a single ZnO nanowire device

Kanghyun Kim; Haeyong Kang; Hyeyoung Kim; Jong Soo Lee; Sangtae Kim; Woun Kang; Gyu Tae Kim

doi:10.1007/s00339-008-4787-5

Contact barriers in a single ZnO nanowire device

Kanghyun Kim, Haeyong Kang, Hyeyoung Kim, Jong Soo Lee, Sangtae Kim, Woun Kang, Gyu Tae Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be ∼30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler-Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4 mV which was 1/11th of that of the two-probe resistance. The Fowler-Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T<100 K.

Original language	English
Pages (from-to)	253-256
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	94
Issue number	2
DOIs	https://doi.org/10.1007/s00339-008-4787-5
State	Published - Feb 2009

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title = "Contact barriers in a single ZnO nanowire device",

abstract = "The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be ∼30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler-Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4 mV which was 1/11th of that of the two-probe resistance. The Fowler-Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T<100 K.",

author = "Kanghyun Kim and Haeyong Kang and Hyeyoung Kim and Lee, \{Jong Soo\} and Sangtae Kim and Woun Kang and Kim, \{Gyu Tae\}",

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AU - Kim, Kanghyun

AU - Kang, Haeyong

AU - Kim, Hyeyoung

AU - Lee, Jong Soo

AU - Kim, Sangtae

AU - Kang, Woun

AU - Kim, Gyu Tae

PY - 2009/2

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N2 - The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be ∼30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler-Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4 mV which was 1/11th of that of the two-probe resistance. The Fowler-Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T<100 K.

AB - The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be ∼30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler-Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4 mV which was 1/11th of that of the two-probe resistance. The Fowler-Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T<100 K.

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EP - 256

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

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ER -

Contact barriers in a single ZnO nanowire device

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