Abstract
A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As a result, there are little erase saturation phenomenon and no retention degradation.
Original language | English |
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Article number | 5325791 |
Pages (from-to) | 1332-1334 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 30 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2009 |
Keywords
- Cone type
- Erase saturation
- Field concentration
- Retention
- SONOS Flash memory