Cone-type SONOS flash memory

Gil Sung Lee, Jung Hoon Lee, Il Han Park, Seongjae Cho, Jang Gn Yun, Dong Hwa Li, Doo Hyun Kim, Yoon Kim, Se Hwan Park, Won Bo Shim, Wan Dong Kim, Jong Duk Lee, Hyungcheol Shin, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As a result, there are little erase saturation phenomenon and no retention degradation.

Original languageEnglish
Article number5325791
Pages (from-to)1332-1334
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
StatePublished - Dec 2009


  • Cone type
  • Erase saturation
  • Field concentration
  • Retention
  • SONOS Flash memory


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