Conductivity switching characteristics and reset currents in NiO films

S. Seo, M. J. Lee, D. H. Seo, S. K. Choi, D. S. Suh, Y. S. Joung, I. K. Yoo, I. S. Byun, I. R. Hwang, S. H. Kim, B. H. Park

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174 Scopus citations

Abstract

Conductivity switching phenomena controlled by external voltages have been investigated for various NiO films deposited by dc reactive sputtering methods. Pt/NiO/Pt capacitor structures with top electrodes of different diameters have showed increasing off-state current with the diameter of a top electrode and nearly the same on-state current independent of the diameter. Local conductivity switching behaviors have been observed in a series structure consisting of two Pt/NiO/Pt capacitors with different resistance values. By reasoning out conductivity switching mechanisms from the switching characteristics and introducing multilayers consisting of NiO layers with different resistance values, we have reduced the reset current by two orders of magnitude.

Original languageEnglish
Article number093509
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number9
DOIs
StatePublished - 28 Feb 2005

Bibliographical note

Funding Information:
One of the authors (B.H.P.) was supported by Korean Research Foundation Grant (KRF-2003-015-C00163).

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