Conductivity switching behaviors in Zro2 and YSZ films deposited by pulsed laser depositions

S. H. Kim, I. S. Byun, I. R. Hwang, J. S. Choi, B. H. Park, S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. K. Yoo

Research output: Contribution to journalArticlepeer-review


Polycrystalline ZrO2 and yttria-stablilized ZrO2 thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Pt/ZrO2/Pt and Pt/YSZ/Pt capacitor structures show giant conductivity switching behaviors which can be utilized for nonvolatile memory devices. Maximum on/off ratio of 106 and good endurance even after 105 times conductivity switching are observed in a typical Pt/ZrO2/Pt whose ZrO2 film has been deposited at 100°C and an oxygen pressure of 50 mTorr. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low voltage region (V < 1.4 V) depending on the value of previously applied high voltage and Schottky-type conduction in the high voltage region (1.4 V < V < 8.9 V). It seems that conductivity switching behaviors in our Pt/ZrO2/Pt structure result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages. A Pt/YSZ/Pt capacitor structure has more stable reset voltage and current state than a Pt/ZrO2/Pt capacitor structure. Moreover, a Pt/YSZ/Pt capacitor structure shows higher Conductivity than a Pt/ZrO2/Pt capacitor structure, which may result from substitution of Y3+ ions for Zr4+ ions.

Original languageEnglish
Pages (from-to)1301-1306
Number of pages6
JournalKey Engineering Materials
Volume306-308 II
StatePublished - 2006


  • Conductivity
  • PLD
  • Switching
  • YSZ
  • ZrO


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