Conductance spectroscopy of resistive switching Pt/Nb:STO single crystal Schottky junctions in air and vacuum

El Mostafa Bourim, Dong Wook Kim

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We investigated the admittance spectra of resistive switching Pt/Nb-doped SrTiO3 single-crystal junctions at different resistance states in air and vacuum. The analyses showed that the carrier lifetime at the traps was largely varied depending on the resistance state, indicating the surface potential modification. The ambient dependence suggested that the charges at the trap states were affected by the oxygen adsorption/desorption at the surface. The conductance spectroscopy method clearly revealed the importance of the interface trap states in the resistive switching behavior.

Original languageEnglish
Pages (from-to)505-509
Number of pages5
JournalCurrent Applied Physics
Volume13
Issue number3
DOIs
StatePublished - May 2013

Keywords

  • Conductance spectroscopy
  • Interface trap state
  • Resistive switching
  • SrTiO

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