Conductance spectroscopy of resistive switching Pt/Nb:STO single crystal Schottky junctions in air and vacuum

El Mostafa Bourim; Dong Wook Kim

doi:10.1016/j.cap.2012.09.022

Conductance spectroscopy of resistive switching Pt/Nb:STO single crystal Schottky junctions in air and vacuum

El Mostafa Bourim, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We investigated the admittance spectra of resistive switching Pt/Nb-doped SrTiO₃ single-crystal junctions at different resistance states in air and vacuum. The analyses showed that the carrier lifetime at the traps was largely varied depending on the resistance state, indicating the surface potential modification. The ambient dependence suggested that the charges at the trap states were affected by the oxygen adsorption/desorption at the surface. The conductance spectroscopy method clearly revealed the importance of the interface trap states in the resistive switching behavior.

Original language	English
Pages (from-to)	505-509
Number of pages	5
Journal	Current Applied Physics
Volume	13
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2012.09.022
State	Published - May 2013

Keywords

Conductance spectroscopy
Interface trap state
Resistive switching
SrTiO

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10.1016/j.cap.2012.09.022

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title = "Conductance spectroscopy of resistive switching Pt/Nb:STO single crystal Schottky junctions in air and vacuum",

abstract = "We investigated the admittance spectra of resistive switching Pt/Nb-doped SrTiO3 single-crystal junctions at different resistance states in air and vacuum. The analyses showed that the carrier lifetime at the traps was largely varied depending on the resistance state, indicating the surface potential modification. The ambient dependence suggested that the charges at the trap states were affected by the oxygen adsorption/desorption at the surface. The conductance spectroscopy method clearly revealed the importance of the interface trap states in the resistive switching behavior.",

keywords = "Conductance spectroscopy, Interface trap state, Resistive switching, SrTiO",

author = "Bourim, {El Mostafa} and Kim, {Dong Wook}",

note = "Funding Information: This work was supported by RP-Grant 2010 of Ewha Womans University and the Basic Research Program ( 2010-0009344 ) through the National Research Foundation of Korea Grant funded by the Korean Ministry of Education, Science, and Technology .",

year = "2013",

month = may,

doi = "10.1016/j.cap.2012.09.022",

language = "English",

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T1 - Conductance spectroscopy of resistive switching Pt/Nb:STO single crystal Schottky junctions in air and vacuum

AU - Bourim, El Mostafa

AU - Kim, Dong Wook

N1 - Funding Information: This work was supported by RP-Grant 2010 of Ewha Womans University and the Basic Research Program ( 2010-0009344 ) through the National Research Foundation of Korea Grant funded by the Korean Ministry of Education, Science, and Technology .

PY - 2013/5

Y1 - 2013/5

N2 - We investigated the admittance spectra of resistive switching Pt/Nb-doped SrTiO3 single-crystal junctions at different resistance states in air and vacuum. The analyses showed that the carrier lifetime at the traps was largely varied depending on the resistance state, indicating the surface potential modification. The ambient dependence suggested that the charges at the trap states were affected by the oxygen adsorption/desorption at the surface. The conductance spectroscopy method clearly revealed the importance of the interface trap states in the resistive switching behavior.

AB - We investigated the admittance spectra of resistive switching Pt/Nb-doped SrTiO3 single-crystal junctions at different resistance states in air and vacuum. The analyses showed that the carrier lifetime at the traps was largely varied depending on the resistance state, indicating the surface potential modification. The ambient dependence suggested that the charges at the trap states were affected by the oxygen adsorption/desorption at the surface. The conductance spectroscopy method clearly revealed the importance of the interface trap states in the resistive switching behavior.

KW - Conductance spectroscopy

KW - Interface trap state

KW - Resistive switching

KW - SrTiO

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U2 - 10.1016/j.cap.2012.09.022

DO - 10.1016/j.cap.2012.09.022

M3 - Article

AN - SCOPUS:84871387182

SN - 1567-1739

VL - 13

SP - 505

EP - 509

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

Conductance spectroscopy of resistive switching Pt/Nb:STO single crystal Schottky junctions in air and vacuum

Abstract

Keywords

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