Thin films of C 60 deposited in vacuum are studied using current-voltage (l-V) measurements and atomic force microscopy (AFM). In situ electrical measurements give an average resistivity of ca. 30 MΩ cm for the as-deposited films at room temperature. The l-V dependences are found to correspond to ohmic behaviour but they have a hysteresis shape attributed to remnant polarisation due to the domain structure of the films. AFM images show a grainy surface morphology for the deposited C 60. Temperature dependent measurements in the range 290-365 K provide evidence for a variable range hopping mechanism of conductance with an activation energy of 0.8-1.0 eV. With further temperature increase the C 60 films restructure leading to an increase in grain size and a change of the electrical properties with l-V dependences showing Schottky barrier formation. The effect of oxygen on the conductance of the C 60films under their exposure to an ambient atmosphere is considered and discussed.
- Atomic force microscopy