Conductance and polarisability of C 60 films

V. N. Popok, M. Jönsson, E. E.B. Campbell

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Thin films of C 60 deposited in vacuum are studied using current-voltage (l-V) measurements and atomic force microscopy (AFM). In situ electrical measurements give an average resistivity of ca. 30 MΩ cm for the as-deposited films at room temperature. The l-V dependences are found to correspond to ohmic behaviour but they have a hysteresis shape attributed to remnant polarisation due to the domain structure of the films. AFM images show a grainy surface morphology for the deposited C 60. Temperature dependent measurements in the range 290-365 K provide evidence for a variable range hopping mechanism of conductance with an activation energy of 0.8-1.0 eV. With further temperature increase the C 60 films restructure leading to an increase in grain size and a change of the electrical properties with l-V dependences showing Schottky barrier formation. The effect of oxygen on the conductance of the C 60films under their exposure to an ambient atmosphere is considered and discussed.

Original languageEnglish
Pages (from-to)1434-1438
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number4-5
StatePublished - Apr 2007


  • Atomic force microscopy
  • Conductance
  • Fullerene
  • Hysteresis
  • Polarisation


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