Comprehensive study of write operation scheme in multi-level resistive switching memory array

A comprehensive analysis of write operations in a multi-level resistive switching memory (RRAM) crossbar array is carried out. A developed numerical method simulates entire current flows and node voltages within one selector-one multi-level RRAM (1S1mR) crossbar array and provides quantitative information, especially voltage drops due to the interconnection line resistance. Due to the intrinsic nature of voltage drops in high-density array, a normal multi-level operation scheme by using variable reset voltages cannot be adopted, which will be a critical bottleneck in implementing high-density crossbar memory array with multi-level RRAM cells. This study provides the understanding of crossbar array for successfully designing the write operation scheme in 1S1mR array.