Comprehensive modeling of resistive switching in the Al/TiO x/TiO2/Al heterostructure based on space-charge-limited conduction

Sungho Kim; Hu Young Jeong; Sung Yool Choi; Yang Kyu Choi

doi:10.1063/1.3467461

Comprehensive modeling of resistive switching in the Al/TiO _x/TiO₂/Al heterostructure based on space-charge-limited conduction

Sungho Kim, Hu Young Jeong, Sung Yool Choi, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

The reversible resistance switching (RS) effect of the Al/TiO _x/TiO₂/Al heterostructure is investigated in this study. This RS was attributed to space-charge-limited conduction (SCLC) as controlled by localized traps in the TiO_x layer. The preexisting SCLC theory was extended to describe the abrupt resistance transition. An analytical model was developed with consideration of the ratio of free and trapped carrier density, which was extracted from the experimental data to show exponentially distributed traps in energy. The proposed model can be applicable to RS phenomena induced by interface-type traps in other material system.

Original language	English
Article number	033508
Journal	Applied Physics Letters
Volume	97
Issue number	3
DOIs	https://doi.org/10.1063/1.3467461
State	Published - 19 Jul 2010

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title = "Comprehensive modeling of resistive switching in the Al/TiO x/TiO2/Al heterostructure based on space-charge-limited conduction",

abstract = "The reversible resistance switching (RS) effect of the Al/TiO x/TiO2/Al heterostructure is investigated in this study. This RS was attributed to space-charge-limited conduction (SCLC) as controlled by localized traps in the TiOx layer. The preexisting SCLC theory was extended to describe the abrupt resistance transition. An analytical model was developed with consideration of the ratio of free and trapped carrier density, which was extracted from the experimental data to show exponentially distributed traps in energy. The proposed model can be applicable to RS phenomena induced by interface-type traps in other material system.",

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AU - Choi, Sung Yool

AU - Choi, Yang Kyu

PY - 2010/7/19

Y1 - 2010/7/19

N2 - The reversible resistance switching (RS) effect of the Al/TiO x/TiO2/Al heterostructure is investigated in this study. This RS was attributed to space-charge-limited conduction (SCLC) as controlled by localized traps in the TiOx layer. The preexisting SCLC theory was extended to describe the abrupt resistance transition. An analytical model was developed with consideration of the ratio of free and trapped carrier density, which was extracted from the experimental data to show exponentially distributed traps in energy. The proposed model can be applicable to RS phenomena induced by interface-type traps in other material system.

AB - The reversible resistance switching (RS) effect of the Al/TiO x/TiO2/Al heterostructure is investigated in this study. This RS was attributed to space-charge-limited conduction (SCLC) as controlled by localized traps in the TiOx layer. The preexisting SCLC theory was extended to describe the abrupt resistance transition. An analytical model was developed with consideration of the ratio of free and trapped carrier density, which was extracted from the experimental data to show exponentially distributed traps in energy. The proposed model can be applicable to RS phenomena induced by interface-type traps in other material system.

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Comprehensive modeling of resistive switching in the Al/TiO x/TiO2/Al heterostructure based on space-charge-limited conduction

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Comprehensive modeling of resistive switching in the Al/TiO _x/TiO₂/Al heterostructure based on space-charge-limited conduction