Compound Semiconductor tunneling field-effect transistor based on ge/gaas heterojunction with tunneling-boost layer for high-performance operation

Young Jun Yoon, Seongjae Cho, Jae Hwa Seo, In Man Kang, Byung Gook Park, Jung Hee Lee

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

In this work, a high-performance compound semiconductor tunneling field-effect transistor (TFET) based on germanium (Ge)/gallium arsenide (GaAs) heterojunction with a tunneling-boost layer is investigated. The tunneling-boost layer in the source-side channel alters the energy bandgap structure between the source and the channel, which affects current drivability considerably. It is shown that controlling the lengths of the boosting layer (thin n GaAs layer) and lightly doped p-type channel (p-GaAs) also has substantial effects on adjusting Vth without complications arising from shifting metal workfunction. Furthermore, we evaluate device performances such as on-state current (Ion), subthreshold swing (S), intrinsic delay time , and cut-off frequency (fT). The proposed TFET with an n-GaAs length of 12 nm showed an S of 27 mV/dec and approximately 3 times higher Ion than that of the device without a boosting layer. Moreover, it is confirmed from the extracted excellent radiofrequency (RF) parameters that the proposed device is suitable for RF applications.

Original languageEnglish
Article number04CC04
JournalJapanese Journal of Applied Physics
Volume52
Issue number4 PART 2
DOIs
StatePublished - Apr 2013

Fingerprint

Dive into the research topics of 'Compound Semiconductor tunneling field-effect transistor based on ge/gaas heterojunction with tunneling-boost layer for high-performance operation'. Together they form a unique fingerprint.

Cite this