TY - JOUR
T1 - Compound Semiconductor tunneling field-effect transistor based on ge/gaas heterojunction with tunneling-boost layer for high-performance operation
AU - Yoon, Young Jun
AU - Cho, Seongjae
AU - Seo, Jae Hwa
AU - Kang, In Man
AU - Park, Byung Gook
AU - Lee, Jung Hee
PY - 2013/4
Y1 - 2013/4
N2 - In this work, a high-performance compound semiconductor tunneling field-effect transistor (TFET) based on germanium (Ge)/gallium arsenide (GaAs) heterojunction with a tunneling-boost layer is investigated. The tunneling-boost layer in the source-side channel alters the energy bandgap structure between the source and the channel, which affects current drivability considerably. It is shown that controlling the lengths of the boosting layer (thin n GaAs layer) and lightly doped p-type channel (p-GaAs) also has substantial effects on adjusting Vth without complications arising from shifting metal workfunction. Furthermore, we evaluate device performances such as on-state current (Ion), subthreshold swing (S), intrinsic delay time , and cut-off frequency (fT). The proposed TFET with an n-GaAs length of 12 nm showed an S of 27 mV/dec and approximately 3 times higher Ion than that of the device without a boosting layer. Moreover, it is confirmed from the extracted excellent radiofrequency (RF) parameters that the proposed device is suitable for RF applications.
AB - In this work, a high-performance compound semiconductor tunneling field-effect transistor (TFET) based on germanium (Ge)/gallium arsenide (GaAs) heterojunction with a tunneling-boost layer is investigated. The tunneling-boost layer in the source-side channel alters the energy bandgap structure between the source and the channel, which affects current drivability considerably. It is shown that controlling the lengths of the boosting layer (thin n GaAs layer) and lightly doped p-type channel (p-GaAs) also has substantial effects on adjusting Vth without complications arising from shifting metal workfunction. Furthermore, we evaluate device performances such as on-state current (Ion), subthreshold swing (S), intrinsic delay time , and cut-off frequency (fT). The proposed TFET with an n-GaAs length of 12 nm showed an S of 27 mV/dec and approximately 3 times higher Ion than that of the device without a boosting layer. Moreover, it is confirmed from the extracted excellent radiofrequency (RF) parameters that the proposed device is suitable for RF applications.
UR - http://www.scopus.com/inward/record.url?scp=84880838959&partnerID=8YFLogxK
U2 - 10.7567/JJAP.52.04CC04
DO - 10.7567/JJAP.52.04CC04
M3 - Article
AN - SCOPUS:84880838959
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 PART 2
M1 - 04CC04
ER -