Abstract
Silicon samples were implanted by small mass-selected Arn + cluster and Ar+ monomer ions with energies in the range of 1.5-18.0 keV/ion. Atomic force microscopy (AFM) shows simple and complex crater formation on the Si surface at the collision spots. A typical complex crater is surrounded by a low-height (∼0.5 nm) rim and it encloses a centre-positioned cone-shaped hillock with height of up to 3.5 nm depending on the implantation conditions. The morphology and dimensions of the craters and hillocks are studied as a function of the cluster size and implantation energy. A model explaining the hillock formation with relation to the thermal-transfer effect and local target melting at the collision spot is proposed.
Original language | English |
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Pages (from-to) | 1179-1184 |
Number of pages | 6 |
Journal | Surface Science |
Volume | 566-568 |
Issue number | 1-3 PART 2 |
DOIs | |
State | Published - 20 Sep 2004 |
Event | Proceedings of the 22nd European Conference on Surface Science - Prague, Czech Republic Duration: 7 Sep 2003 → 12 Sep 2003 |
Bibliographical note
Funding Information:Authors acknowledge financial support from The Swedish Research Council under contracts Nos. 621-2002-5387, 629-2002-7526 and from the Göran Gustafsson Foundation for Research in Natural Science and Medicine.
Keywords
- Atomic force microscopy
- Clusters
- Ion implantation
- Surface structure, morphology, roughness, and topography