Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses

Dong Keun Lee, Min Hwi Kim, Suhyun Bang, Tae Hyeon Kim, Yeon Joon Choi, Sungjun Kim, Seongjae Cho, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

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