Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses

Dong Keun Lee; Min Hwi Kim; Suhyun Bang; Tae Hyeon Kim; Yeon Joon Choi; Sungjun Kim; Seongjae Cho; Byung Gook Park

doi:10.23919/SNW.2019.8782952

Comparison of switching characteristics of HfO_x RRAM device with different switching layer thicknesses

Dong Keun Lee, Min Hwi Kim, Suhyun Bang, Tae Hyeon Kim, Yeon Joon Choi, Sungjun Kim, Seongjae Cho, Byung Gook Park

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents switching characteristics of Ni/HfO_x/p+-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfO_x RRAM while step-like reset process is seen from 5 nm HfO_x RRAM. From the measurement results, fabricated RRAM device with thicker switching layer is more suitable for nonvolatile memory operation while thinner HfO_x layer has potential for application in neuromorphic computing system.

Original language	English
Title of host publication	2019 Silicon Nanoelectronics Workshop, SNW 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784863487024
DOIs	https://doi.org/10.23919/SNW.2019.8782952
State	Published - Jun 2019
Event	24th Silicon Nanoelectronics Workshop, SNW 2019 - Kyoto, Japan Duration: 9 Jun 2019 → 10 Jun 2019

Publication series

Name	2019 Silicon Nanoelectronics Workshop, SNW 2019

Conference

Conference	24th Silicon Nanoelectronics Workshop, SNW 2019
Country/Territory	Japan
City	Kyoto
Period	9/06/19 → 10/06/19

Access to Document

10.23919/SNW.2019.8782952

Cite this

Lee, D. K., Kim, M. H., Bang, S., Kim, T. H., Choi, Y. J., Kim, S., Cho, S., & Park, B. G. (2019). Comparison of switching characteristics of HfO_x RRAM device with different switching layer thicknesses. In 2019 Silicon Nanoelectronics Workshop, SNW 2019 Article 8782952 (2019 Silicon Nanoelectronics Workshop, SNW 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2019.8782952

@inproceedings{a8b1f429878f4d13b0cb1d9640a58953,

title = "Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses",

abstract = "This paper presents switching characteristics of Ni/HfOx/p+-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfOx RRAM while step-like reset process is seen from 5 nm HfOx RRAM. From the measurement results, fabricated RRAM device with thicker switching layer is more suitable for nonvolatile memory operation while thinner HfOx layer has potential for application in neuromorphic computing system.",

author = "Lee, {Dong Keun} and Kim, {Min Hwi} and Suhyun Bang and Kim, {Tae Hyeon} and Choi, {Yeon Joon} and Sungjun Kim and Seongjae Cho and Park, {Byung Gook}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning (2018R1A2A1A05023517) and also supported in part by the Brain Korea 21 Plus Program in 2019. Publisher Copyright: {\textcopyright} 2019 JSAP.; 24th Silicon Nanoelectronics Workshop, SNW 2019 ; Conference date: 09-06-2019 Through 10-06-2019",

year = "2019",

month = jun,

doi = "10.23919/SNW.2019.8782952",

language = "English",

series = "2019 Silicon Nanoelectronics Workshop, SNW 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 Silicon Nanoelectronics Workshop, SNW 2019",

}

Lee, DK, Kim, MH, Bang, S, Kim, TH, Choi, YJ, Kim, S, Cho, S & Park, BG 2019, Comparison of switching characteristics of HfO_x RRAM device with different switching layer thicknesses. in 2019 Silicon Nanoelectronics Workshop, SNW 2019., 8782952, 2019 Silicon Nanoelectronics Workshop, SNW 2019, Institute of Electrical and Electronics Engineers Inc., 24th Silicon Nanoelectronics Workshop, SNW 2019, Kyoto, Japan, 9/06/19. https://doi.org/10.23919/SNW.2019.8782952

Comparison of switching characteristics of HfO_x RRAM device with different switching layer thicknesses. / Lee, Dong Keun; Kim, Min Hwi; Bang, Suhyun et al.
2019 Silicon Nanoelectronics Workshop, SNW 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8782952 (2019 Silicon Nanoelectronics Workshop, SNW 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses

AU - Lee, Dong Keun

AU - Kim, Min Hwi

AU - Bang, Suhyun

AU - Kim, Tae Hyeon

AU - Choi, Yeon Joon

AU - Kim, Sungjun

AU - Cho, Seongjae

AU - Park, Byung Gook

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning (2018R1A2A1A05023517) and also supported in part by the Brain Korea 21 Plus Program in 2019. Publisher Copyright: © 2019 JSAP.

PY - 2019/6

Y1 - 2019/6

N2 - This paper presents switching characteristics of Ni/HfOx/p+-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfOx RRAM while step-like reset process is seen from 5 nm HfOx RRAM. From the measurement results, fabricated RRAM device with thicker switching layer is more suitable for nonvolatile memory operation while thinner HfOx layer has potential for application in neuromorphic computing system.

AB - This paper presents switching characteristics of Ni/HfOx/p+-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfOx RRAM while step-like reset process is seen from 5 nm HfOx RRAM. From the measurement results, fabricated RRAM device with thicker switching layer is more suitable for nonvolatile memory operation while thinner HfOx layer has potential for application in neuromorphic computing system.

UR - http://www.scopus.com/inward/record.url?scp=85070861664&partnerID=8YFLogxK

U2 - 10.23919/SNW.2019.8782952

DO - 10.23919/SNW.2019.8782952

M3 - Conference contribution

AN - SCOPUS:85070861664

T3 - 2019 Silicon Nanoelectronics Workshop, SNW 2019

BT - 2019 Silicon Nanoelectronics Workshop, SNW 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th Silicon Nanoelectronics Workshop, SNW 2019

Y2 - 9 June 2019 through 10 June 2019

ER -