Compact modeling of silicon nanowire MOSFET for radio frequency applications

Seongjae Cho, Kyung Rok Kim, Byung Gook Park, In Man Kang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


This article presents the radio frequency small-signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y-parameter analysis for the proposed equivalent circuit. Y-parameters of SNW MOSFET are obtained by three-dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y-parameter was calculated to be only 1.4%.

Original languageEnglish
Pages (from-to)471-473
Number of pages3
JournalMicrowave and Optical Technology Letters
Issue number2
StatePublished - Feb 2011


  • model
  • radio frequency
  • silicon nanowire


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