TY - JOUR
T1 - Colossal Seebeck Coefficient of Hopping Electrons in (TMTSF)2 PF6
AU - Machida, Yo
AU - Lin, Xiao
AU - Kang, Woun
AU - Izawa, Koichi
AU - Behnia, Kamran
N1 - Publisher Copyright:
© 2016 American Physical Society.
PY - 2016/2/25
Y1 - 2016/2/25
N2 - We report on a study of the Seebeck coefficient and resistivity in the quasi-one-dimensional conductor (TMTSF)2 PF6 extended deep into the spin-density-wave state. The metal-insulator transition at TSDW=12 K leads to a reduction in carrier concentration by 7 orders of magnitude. Below 1 K, charge transport displays the behavior known as variable range hopping. Until now, the Seebeck response of electrons in this regime has barely been explored and is even less understood. We find that, in this system, residual carriers, hopping from one trap to another, generate a Seebeck coefficient as large as 400 kB/e. The results provide the first solid evidence for a long-standing prediction according to which hopping electrons in the presence of the Coulomb interaction can generate a sizable Seebeck coefficient in the zero-temperature limit.
AB - We report on a study of the Seebeck coefficient and resistivity in the quasi-one-dimensional conductor (TMTSF)2 PF6 extended deep into the spin-density-wave state. The metal-insulator transition at TSDW=12 K leads to a reduction in carrier concentration by 7 orders of magnitude. Below 1 K, charge transport displays the behavior known as variable range hopping. Until now, the Seebeck response of electrons in this regime has barely been explored and is even less understood. We find that, in this system, residual carriers, hopping from one trap to another, generate a Seebeck coefficient as large as 400 kB/e. The results provide the first solid evidence for a long-standing prediction according to which hopping electrons in the presence of the Coulomb interaction can generate a sizable Seebeck coefficient in the zero-temperature limit.
UR - http://www.scopus.com/inward/record.url?scp=84959377615&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.116.087003
DO - 10.1103/PhysRevLett.116.087003
M3 - Article
AN - SCOPUS:84959377615
SN - 0031-9007
VL - 116
JO - Physical Review Letters
JF - Physical Review Letters
IS - 8
M1 - 087003
ER -