Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

Jinhong Shin; Abdul Waheed; Wyatt A. Winkenwerder; Hyun Woo Kim; Kyriacos Agapiou; Richard A. Jones; Gyeong S. Hwang; John G. Ekerdt

doi:10.1016/j.tsf.2007.01.002

Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

Jinhong Shin, Abdul Waheed, Wyatt A. Winkenwerder, Hyun Woo Kim, Kyriacos Agapiou, Richard A. Jones, Gyeong S. Hwang, John G. Ekerdt

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO₂ containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH₂(PMe₃)₄ (Me = CH₃) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.

Original language	English
Pages (from-to)	5298-5307
Number of pages	10
Journal	Thin Solid Films
Volume	515
Issue number	13
DOIs	https://doi.org/10.1016/j.tsf.2007.01.002
State	Published - 7 May 2007

Bibliographical note

Funding Information:
This work was supported by the Semiconductor Research Corporation (Contract 2005-KC-1292.016), the State of Texas Advanced Materials Research Center, and the National Science Foundation (Grant CTS-0553839) and the Robert A. Welch Foundation (Grant F-816).

Keywords

Ab initio molecular dynamics simulation
Amorphous films
Chemical vapor deposition
Ruthenium alloy

Access to Document

10.1016/j.tsf.2007.01.002

Cite this

@article{8c3e397809e74a9ab22beb3c47721757,

title = "Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films",

abstract = "Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH2(PMe3)4 (Me = CH3) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.",

keywords = "Ab initio molecular dynamics simulation, Amorphous films, Chemical vapor deposition, Ruthenium alloy",

author = "Jinhong Shin and Abdul Waheed and Winkenwerder, {Wyatt A.} and Kim, {Hyun Woo} and Kyriacos Agapiou and Jones, {Richard A.} and Hwang, {Gyeong S.} and Ekerdt, {John G.}",

note = "Funding Information: This work was supported by the Semiconductor Research Corporation (Contract 2005-KC-1292.016), the State of Texas Advanced Materials Research Center, and the National Science Foundation (Grant CTS-0553839) and the Robert A. Welch Foundation (Grant F-816).",

year = "2007",

month = may,

day = "7",

doi = "10.1016/j.tsf.2007.01.002",

language = "English",

volume = "515",

pages = "5298--5307",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "13",

}

TY - JOUR

T1 - Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

AU - Shin, Jinhong

AU - Waheed, Abdul

AU - Winkenwerder, Wyatt A.

AU - Kim, Hyun Woo

AU - Agapiou, Kyriacos

AU - Jones, Richard A.

AU - Hwang, Gyeong S.

AU - Ekerdt, John G.

N1 - Funding Information: This work was supported by the Semiconductor Research Corporation (Contract 2005-KC-1292.016), the State of Texas Advanced Materials Research Center, and the National Science Foundation (Grant CTS-0553839) and the Robert A. Welch Foundation (Grant F-816).

PY - 2007/5/7

Y1 - 2007/5/7

N2 - Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH2(PMe3)4 (Me = CH3) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.

AB - Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH2(PMe3)4 (Me = CH3) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.

KW - Ab initio molecular dynamics simulation

KW - Amorphous films

KW - Chemical vapor deposition

KW - Ruthenium alloy

UR - http://www.scopus.com/inward/record.url?scp=33947728814&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.01.002

DO - 10.1016/j.tsf.2007.01.002

M3 - Article

AN - SCOPUS:33947728814

SN - 0040-6090

VL - 515

SP - 5298

EP - 5307

JO - Thin Solid Films

JF - Thin Solid Films

IS - 13

ER -

Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

Abstract

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this