Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH2(PMe3)4 (Me = CH3) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.
Bibliographical noteFunding Information:
This work was supported by the Semiconductor Research Corporation (Contract 2005-KC-1292.016), the State of Texas Advanced Materials Research Center, and the National Science Foundation (Grant CTS-0553839) and the Robert A. Welch Foundation (Grant F-816).
- Ab initio molecular dynamics simulation
- Amorphous films
- Chemical vapor deposition
- Ruthenium alloy