Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

Jinhong Shin, Abdul Waheed, Wyatt A. Winkenwerder, Hyun Woo Kim, Kyriacos Agapiou, Richard A. Jones, Gyeong S. Hwang, John G. Ekerdt

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH2(PMe3)4 (Me = CH3) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.

Original languageEnglish
Pages (from-to)5298-5307
Number of pages10
JournalThin Solid Films
Issue number13
StatePublished - 7 May 2007

Bibliographical note

Funding Information:
This work was supported by the Semiconductor Research Corporation (Contract 2005-KC-1292.016), the State of Texas Advanced Materials Research Center, and the National Science Foundation (Grant CTS-0553839) and the Robert A. Welch Foundation (Grant F-816).


  • Ab initio molecular dynamics simulation
  • Amorphous films
  • Chemical vapor deposition
  • Ruthenium alloy


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