Chemical routes to ultra thin films for copper barriers and liners

Jinhong Shin, Hyun Woo Kim, Gyeong S. Hwang, John G. Ekerdt

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Triruthenium dodecarbonyl and trimethylphosphine or triphenylphosphine were used in flowing hydrogen or argon at 575 K to explore the effect of changing the percentage of P on the amorphous character of the films and on the electrical properties of the films. Films as thin as 7 nm were grown. The films contained a carbon impurity that depended on the delivery gas and the alkylphoshphine source. The microstructure changed with the percentage P; amorphous films formed provided the percentage of P exceeded 15 at.%. Film resistivity was most sensitive to the carbon impurity and also changed with microstructure. A 15 nm thick, amorphous film containing ∼ 15 at.% P had a resistivity of 210 μΩ cm. Ion scattering studies reveal that ∼ 0.4 nm Cu films completely wet amorphous Ru-P alloy films. First-principles density-functional calculations are presented revealing the interaction of Ru with P, and predicting that the amorphous structure should be most stable above 20 at.% P.

Original languageEnglish
Pages (from-to)9256-9259
Number of pages4
JournalSurface and Coatings Technology
Issue number22-23 SPEC. ISS.
StatePublished - 25 Sep 2007

Bibliographical note

Funding Information:
This work was supported by the Semiconductor Research Corporation (Contract 2006-KC-1292.016) and the National Science Foundation (Grant CTS-0553839).


  • Ab initio molecular dynamics simulation
  • Amorphous
  • Organometallic CVD
  • Ruthenium, Phosphorus


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