Abstract
Triruthenium dodecarbonyl and trimethylphosphine or triphenylphosphine were used in flowing hydrogen or argon at 575 K to explore the effect of changing the percentage of P on the amorphous character of the films and on the electrical properties of the films. Films as thin as 7 nm were grown. The films contained a carbon impurity that depended on the delivery gas and the alkylphoshphine source. The microstructure changed with the percentage P; amorphous films formed provided the percentage of P exceeded 15 at.%. Film resistivity was most sensitive to the carbon impurity and also changed with microstructure. A 15 nm thick, amorphous film containing ∼ 15 at.% P had a resistivity of 210 μΩ cm. Ion scattering studies reveal that ∼ 0.4 nm Cu films completely wet amorphous Ru-P alloy films. First-principles density-functional calculations are presented revealing the interaction of Ru with P, and predicting that the amorphous structure should be most stable above 20 at.% P.
| Original language | English |
|---|---|
| Pages (from-to) | 9256-9259 |
| Number of pages | 4 |
| Journal | Surface and Coatings Technology |
| Volume | 201 |
| Issue number | 22-23 SPEC. ISS. |
| DOIs | |
| State | Published - 25 Sep 2007 |
Bibliographical note
Funding Information:This work was supported by the Semiconductor Research Corporation (Contract 2006-KC-1292.016) and the National Science Foundation (Grant CTS-0553839).
Keywords
- Ab initio molecular dynamics simulation
- Amorphous
- Organometallic CVD
- Ruthenium, Phosphorus