Charge carrier mobility study of a mesogenic thienothiophene derivative in bulk and thin films

Leszek Mazur; Andrea Castiglione; Kornel Ocytko; Farid Kameche; Romain Macabies; Abdelmalek Ainsebaa; David Kreher; Benoît Heinrich; Bertrand Donnio; Sébastien Sanaur; Emmanuelle Lacaze; Jean Louis Fave; Katarzyna Matczyszyn; Marek Samoc; Jeong Weon Wu; Andre Jean Attias; Jean Charles Ribierre; Fabrice Mathevet

doi:10.1016/j.orgel.2014.01.017

Charge carrier mobility study of a mesogenic thienothiophene derivative in bulk and thin films

Leszek Mazur, Andrea Castiglione, Kornel Ocytko, Farid Kameche, Romain Macabies, Abdelmalek Ainsebaa, David Kreher, Benoît Heinrich, Bertrand Donnio, Sébastien Sanaur, Emmanuelle Lacaze, Jean Louis Fave, Katarzyna Matczyszyn, Marek Samoc, Jeong Weon Wu, Andre Jean Attias, Jean Charles Ribierre, Fabrice Mathevet

Department of Physics

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

A novel mesogenic 2,5-bis-(5-octylthiophene)-thieno[3,2b]thiophene (TT) derivative has been synthesized. The fused-ring thiophene, end-capped with two octylthiophenes, exhibits ordered lamellar mesophases which were characterized by polarizing optical microscopy, differential scanning calorimetry and small-angle X-ray diffraction at various temperatures. The charge transport properties were investigated by time-of-flight technique as a function of temperature. On cooling from isotropic phase, a maximum hole mobility value of 0.07 cm² V^-1 s^-1 was measured in the highly ordered mesophase of the bulk films. Field-effect transistor experiments on both solution and vacuum deposited thin films have also been performed. The solution-processed films exhibit charge carrier mobilities several orders of magnitude lower than values extracted from bulk time-of-flight curves and from vacuum deposited thin film transistors. This work provides evidence that the melt-processing route is an efficient alternative to commonly used solution-processing for fabrication of charge transporting layers from liquid crystalline semiconductors, with performances comparable to evaporation techniques.

Original language	English
Pages (from-to)	943-953
Number of pages	11
Journal	Organic Electronics
Volume	15
Issue number	4
DOIs	https://doi.org/10.1016/j.orgel.2014.01.017
State	Published - Apr 2014

Bibliographical note

Funding Information:
We gratefully acknowledge the support of the Foundation for Polish Science under a Welcome Grant “Organometallics in Nanophotonics”. L.M. is thankful to the French government for the Polish-French “co-tutelle” PhD program. The authors acknowledge French agency ANR for “Trambipoly” Grant (ANR-08-NANO-051). S.S. and A.A. would like to thank Thierry Camilloni, Sylvain Nolot, Cyril Calmes, Gaëlle Rondeau for technical support in the clean room during transistors fabrication. The transistor characterization measurements have been carried out in the framework of the French-Korean International Laboratory “CNRS-EWHA Research Center for Ultrafast Optics and Nanoelectronics of Functional Nanostructures”.

Keywords

Charge transport properties
Hole mobility
Ordered mesophase
Organic field-effect transistor
Thienothiophene
Time-of-flight

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10.1016/j.orgel.2014.01.017

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Mazur, L., Castiglione, A., Ocytko, K., Kameche, F., Macabies, R., Ainsebaa, A., Kreher, D., Heinrich, B., Donnio, B., Sanaur, S., Lacaze, E., Fave, J. L., Matczyszyn, K., Samoc, M., Wu, J. W., Attias, A. J., Ribierre, J. C., & Mathevet, F. (2014). Charge carrier mobility study of a mesogenic thienothiophene derivative in bulk and thin films. Organic Electronics, 15(4), 943-953. https://doi.org/10.1016/j.orgel.2014.01.017

@article{b28ffa6818064ff18625ca2f491b5be8,

title = "Charge carrier mobility study of a mesogenic thienothiophene derivative in bulk and thin films",

abstract = "A novel mesogenic 2,5-bis-(5-octylthiophene)-thieno[3,2b]thiophene (TT) derivative has been synthesized. The fused-ring thiophene, end-capped with two octylthiophenes, exhibits ordered lamellar mesophases which were characterized by polarizing optical microscopy, differential scanning calorimetry and small-angle X-ray diffraction at various temperatures. The charge transport properties were investigated by time-of-flight technique as a function of temperature. On cooling from isotropic phase, a maximum hole mobility value of 0.07 cm2 V-1 s-1 was measured in the highly ordered mesophase of the bulk films. Field-effect transistor experiments on both solution and vacuum deposited thin films have also been performed. The solution-processed films exhibit charge carrier mobilities several orders of magnitude lower than values extracted from bulk time-of-flight curves and from vacuum deposited thin film transistors. This work provides evidence that the melt-processing route is an efficient alternative to commonly used solution-processing for fabrication of charge transporting layers from liquid crystalline semiconductors, with performances comparable to evaporation techniques.",

keywords = "Charge transport properties, Hole mobility, Ordered mesophase, Organic field-effect transistor, Thienothiophene, Time-of-flight",

author = "Leszek Mazur and Andrea Castiglione and Kornel Ocytko and Farid Kameche and Romain Macabies and Abdelmalek Ainsebaa and David Kreher and Beno{\^i}t Heinrich and Bertrand Donnio and S{\'e}bastien Sanaur and Emmanuelle Lacaze and Fave, {Jean Louis} and Katarzyna Matczyszyn and Marek Samoc and Wu, {Jeong Weon} and Attias, {Andre Jean} and Ribierre, {Jean Charles} and Fabrice Mathevet",

note = "Funding Information: We gratefully acknowledge the support of the Foundation for Polish Science under a Welcome Grant “Organometallics in Nanophotonics”. L.M. is thankful to the French government for the Polish-French “co-tutelle” PhD program. The authors acknowledge French agency ANR for “Trambipoly” Grant (ANR-08-NANO-051). S.S. and A.A. would like to thank Thierry Camilloni, Sylvain Nolot, Cyril Calmes, Ga{\"e}lle Rondeau for technical support in the clean room during transistors fabrication. The transistor characterization measurements have been carried out in the framework of the French-Korean International Laboratory “CNRS-EWHA Research Center for Ultrafast Optics and Nanoelectronics of Functional Nanostructures”.",

year = "2014",

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doi = "10.1016/j.orgel.2014.01.017",

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Mazur, L, Castiglione, A, Ocytko, K, Kameche, F, Macabies, R, Ainsebaa, A, Kreher, D, Heinrich, B, Donnio, B, Sanaur, S, Lacaze, E, Fave, JL, Matczyszyn, K, Samoc, M, Wu, JW, Attias, AJ, Ribierre, JC & Mathevet, F 2014, 'Charge carrier mobility study of a mesogenic thienothiophene derivative in bulk and thin films', Organic Electronics, vol. 15, no. 4, pp. 943-953. https://doi.org/10.1016/j.orgel.2014.01.017

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AU - Mazur, Leszek

AU - Castiglione, Andrea

AU - Ocytko, Kornel

AU - Kameche, Farid

AU - Macabies, Romain

AU - Ainsebaa, Abdelmalek

AU - Kreher, David

AU - Heinrich, Benoît

AU - Donnio, Bertrand

AU - Sanaur, Sébastien

AU - Lacaze, Emmanuelle

AU - Fave, Jean Louis

AU - Matczyszyn, Katarzyna

AU - Samoc, Marek

AU - Wu, Jeong Weon

AU - Attias, Andre Jean

AU - Ribierre, Jean Charles

AU - Mathevet, Fabrice

N1 - Funding Information: We gratefully acknowledge the support of the Foundation for Polish Science under a Welcome Grant “Organometallics in Nanophotonics”. L.M. is thankful to the French government for the Polish-French “co-tutelle” PhD program. The authors acknowledge French agency ANR for “Trambipoly” Grant (ANR-08-NANO-051). S.S. and A.A. would like to thank Thierry Camilloni, Sylvain Nolot, Cyril Calmes, Gaëlle Rondeau for technical support in the clean room during transistors fabrication. The transistor characterization measurements have been carried out in the framework of the French-Korean International Laboratory “CNRS-EWHA Research Center for Ultrafast Optics and Nanoelectronics of Functional Nanostructures”.

PY - 2014/4

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N2 - A novel mesogenic 2,5-bis-(5-octylthiophene)-thieno[3,2b]thiophene (TT) derivative has been synthesized. The fused-ring thiophene, end-capped with two octylthiophenes, exhibits ordered lamellar mesophases which were characterized by polarizing optical microscopy, differential scanning calorimetry and small-angle X-ray diffraction at various temperatures. The charge transport properties were investigated by time-of-flight technique as a function of temperature. On cooling from isotropic phase, a maximum hole mobility value of 0.07 cm2 V-1 s-1 was measured in the highly ordered mesophase of the bulk films. Field-effect transistor experiments on both solution and vacuum deposited thin films have also been performed. The solution-processed films exhibit charge carrier mobilities several orders of magnitude lower than values extracted from bulk time-of-flight curves and from vacuum deposited thin film transistors. This work provides evidence that the melt-processing route is an efficient alternative to commonly used solution-processing for fabrication of charge transporting layers from liquid crystalline semiconductors, with performances comparable to evaporation techniques.

AB - A novel mesogenic 2,5-bis-(5-octylthiophene)-thieno[3,2b]thiophene (TT) derivative has been synthesized. The fused-ring thiophene, end-capped with two octylthiophenes, exhibits ordered lamellar mesophases which were characterized by polarizing optical microscopy, differential scanning calorimetry and small-angle X-ray diffraction at various temperatures. The charge transport properties were investigated by time-of-flight technique as a function of temperature. On cooling from isotropic phase, a maximum hole mobility value of 0.07 cm2 V-1 s-1 was measured in the highly ordered mesophase of the bulk films. Field-effect transistor experiments on both solution and vacuum deposited thin films have also been performed. The solution-processed films exhibit charge carrier mobilities several orders of magnitude lower than values extracted from bulk time-of-flight curves and from vacuum deposited thin film transistors. This work provides evidence that the melt-processing route is an efficient alternative to commonly used solution-processing for fabrication of charge transporting layers from liquid crystalline semiconductors, with performances comparable to evaporation techniques.

KW - Charge transport properties

KW - Hole mobility

KW - Ordered mesophase

KW - Organic field-effect transistor

KW - Thienothiophene

KW - Time-of-flight

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DO - 10.1016/j.orgel.2014.01.017

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SN - 1566-1199

VL - 15

SP - 943

EP - 953

JO - Organic Electronics

JF - Organic Electronics

IS - 4

ER -

Charge carrier mobility study of a mesogenic thienothiophene derivative in bulk and thin films

Abstract

Bibliographical note

Keywords

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