Charge carrier mobility study of a mesogenic thienothiophene derivative in bulk and thin films

Leszek Mazur, Andrea Castiglione, Kornel Ocytko, Farid Kameche, Romain Macabies, Abdelmalek Ainsebaa, David Kreher, Benoît Heinrich, Bertrand Donnio, Sébastien Sanaur, Emmanuelle Lacaze, Jean Louis Fave, Katarzyna Matczyszyn, Marek Samoc, Jeong Weon Wu, Andre Jean Attias, Jean Charles Ribierre, Fabrice Mathevet

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24 Scopus citations


A novel mesogenic 2,5-bis-(5-octylthiophene)-thieno[3,2b]thiophene (TT) derivative has been synthesized. The fused-ring thiophene, end-capped with two octylthiophenes, exhibits ordered lamellar mesophases which were characterized by polarizing optical microscopy, differential scanning calorimetry and small-angle X-ray diffraction at various temperatures. The charge transport properties were investigated by time-of-flight technique as a function of temperature. On cooling from isotropic phase, a maximum hole mobility value of 0.07 cm2 V-1 s-1 was measured in the highly ordered mesophase of the bulk films. Field-effect transistor experiments on both solution and vacuum deposited thin films have also been performed. The solution-processed films exhibit charge carrier mobilities several orders of magnitude lower than values extracted from bulk time-of-flight curves and from vacuum deposited thin film transistors. This work provides evidence that the melt-processing route is an efficient alternative to commonly used solution-processing for fabrication of charge transporting layers from liquid crystalline semiconductors, with performances comparable to evaporation techniques.

Original languageEnglish
Pages (from-to)943-953
Number of pages11
JournalOrganic Electronics
Issue number4
StatePublished - Apr 2014

Bibliographical note

Funding Information:
We gratefully acknowledge the support of the Foundation for Polish Science under a Welcome Grant “Organometallics in Nanophotonics”. L.M. is thankful to the French government for the Polish-French “co-tutelle” PhD program. The authors acknowledge French agency ANR for “Trambipoly” Grant (ANR-08-NANO-051). S.S. and A.A. would like to thank Thierry Camilloni, Sylvain Nolot, Cyril Calmes, Gaëlle Rondeau for technical support in the clean room during transistors fabrication. The transistor characterization measurements have been carried out in the framework of the French-Korean International Laboratory “CNRS-EWHA Research Center for Ultrafast Optics and Nanoelectronics of Functional Nanostructures”.


  • Charge transport properties
  • Hole mobility
  • Ordered mesophase
  • Organic field-effect transistor
  • Thienothiophene
  • Time-of-flight


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