Abstract
A charge-based analytical current model for an asymmetric Double-Gate (DG) MOSFET is presented. This analytical model is based on the inversion charge instead of the surface potential, so that the volume-inversion characteristics of the thin-body DG MOSFET can be accurately considered. By comparing the model with the device simulation results, model accuracy is verified for the entire operating range, including the linear, saturation, and subthreshold regions.
| Original language | English |
|---|---|
| Pages (from-to) | S392-S396 |
| Journal | Journal of the Korean Physical Society |
| Volume | 47 |
| Issue number | SUPPL. 3 |
| State | Published - Nov 2005 |
Keywords
- Asymmetric
- Current model
- Double-gate MOSFETs
- Inversion layer
- Semiconductor device modeling